Morphology and lattice coherency in GaAs nanocrystals grown on Si(100) surface

Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

  Usui, Hiroyuki ^a   Yasuda, Hidehiro ^a   Mori, Hirotaro ^b  

^a KOBE UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; LATTICE CONSTANTS; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; SUBSTRATES;

GROWTH RATE; LATTICE COHERENCY; RECTANGULAR BASE;

NANOSTRUCTURED MATERIALS;

EID: 33750483578     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2363147     Document Type: Article

References (4)

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3. A. Li, F. Liu, and M. G. Lagally, Phys. Rev. Lett. 85, 1922 (2000).
4. A. Pradhan, N.-Y. Ma, and F. Liu, Phys. Rev. B 70, 193405 (2004).