Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

Progress in Photovoltaics: Research and Applications

Volumn 10, Issue 6, 2002, Pages 417-426

  Ringel, S A ^a   Carlin, J A ^a,e   Andre, C L ^a   Hudait, M K ^a   Gonzalez, M ^a   Wilt, D M ^b   Clark, E B ^b   Jenkins, P ^b   Scheiman, D ^b   Allerman, A ^c   Fitzgerald, E A ^d   Leitz, C W ^d  

^a Ohio State University   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Massachusetts Institute of Technology Cambridge   (United States)

^e AmberWave Systems Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SHORT CIRCUIT CURRENTS;

ANTI-PHASE DOMAINS; LATTICE MISMATCHED DEVICES; OPEN-CIRCUIT VOLTAGES;

SOLAR CELLS;

EID: 0036738175     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.448     Document Type: Article

References (15)

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13. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion
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