High-temperature growth of very high germanium content SiGe virtual substrates

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 523-531

  Bogumilowicz, Y ^a   Hartmann, J M ^b   Di Nardo, C ^b   Holliger, P ^b   Papon, A M ^b   Rolland, G ^b   Billon, T ^b  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

Author keywords

A1. Cross hatch; A1. Strain relaxation; A1. Threading dislocations; A1. Virtual substrates; A3. Reduced pressure chemical vapour deposition; B1. SiGe

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); HIGH TEMPERATURE APPLICATIONS; SILICON COMPOUNDS; STRAIN RATE; SUBSTRATES; SURFACE ROUGHNESS;

CROSS-HATCH; REDUCED PRESSURE-CHEMICAL VAPOUR DEPOSITION; STRAIN RELAXATION; THREADING DISLOCATIONS; VIRTUAL SUBSTRATES;

GROWTH KINETICS;

EID: 33646372489     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.019     Document Type: Article

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