High quality GaAs growth by MBE on Si using GeSi buffers and prospects for space photovoltaics

Progress in Photovoltaics: Research and Applications

Volumn 8, Issue 3, 2000, Pages 323-332

  Carlin, J A ^a   Ringel, S A ^a   Fitzgerald, E A ^b   Bulsara, M ^c  

^a Ohio State University   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c Amberwave   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); INDUCED CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON WAFERS; SPACECRAFT POWER SUPPLIES; THERMAL EXPANSION;

ALUMINUM GALLIUM ARSENIDE; GERMANIUM SILICIDE; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHVCVD);

SILICON SOLAR CELLS;

EID: 0033717690     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/1099-159X(200005/06)8:3<323::AID-PIP322>3.0.CO;2-U     Document Type: Article

References (11)

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