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Volumn 227-228, Issue , 2001, Pages 279-283
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Growth of GaP on Si substrates by solid-source molecular beam epitaxy
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Author keywords
A3. Molecular beam epitaxy; A3. Solid source molecular beam epitaxy
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Indexed keywords
AMORPHOUS FILMS;
ATOMIC FORCE MICROSCOPY;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
NUCLEATION;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
SURFACE ROUGHNESS;
X RAY CRYSTALLOGRAPHY;
ATOMIC LAYER EPITAXY (ALE);
GALLIUM PHOSPHIDE;
HETEROEPITAXY;
SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);
SEMICONDUCTING FILMS;
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EID: 0035398761
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00705-9 Document Type: Conference Paper |
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Times cited : (16)
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References (16)
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