Optoelectronic device performance on reduced threading dislocation density GaAs/Si

Journal of Applied Physics

Volumn 89, Issue 8, 2001, Pages 4365-4375

  Taylor, P J ^a,e   Jesser, W A ^a   Benson, J D ^b   Martinka, M ^b   Dinan, J H ^b   Bradshaw, J ^c   Lara Taysing, M ^c   Leavitt, R P ^c   Simonis, G ^c   Chang, W ^c   Clark III, W W ^c   Bertness, K A ^d  

^a University of Virginia   (United States)

^b US Army Communications and Electronics Command   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^e MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035871275     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1347000     Document Type: Article

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