Instabilities in crystal growth by atomic or molecular beams

Physics Report

Volumn 324, Issue 5-6, 2000, Pages 271-404

  Politi, Paolo ^a,b,c,d   Grenet, Geneviève ^e   Marty, Alain ^d   Ponchet, Anne ^f   Villain, Jacques ^b,c,g  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b UNIVERSITY OF FLORENCE   (Italy)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d DIF   (France)

^e ECOLE CENTRALE DE LYON   (France)

^f CEMES CNRS   (France)

^g CEA GRENOBLE   (France)

Author keywords

81.10.Aj; 81.15.Hi; Crystal growth; Instability; MBE (Molecular Beam Epitaxy)

Indexed keywords

EID: 0002489522     PISSN: 03701573     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0370-1573(99)00046-0     Document Type: Review

References (276)

1. M.A. Herman, H. Sitter, Molecular Beam Epitaxy, Springer, Heidelberg, 1996.
2. A. Valance, C. Misbah, D. Temkin, K. Kassner, Analytic theory for parity breaking in lamellar eutectic growth, Phys. Rev. E 48 (1993) 1924 and references therein.
3. P. Nozières, Shape and growth of crystals, in: C. Godrèche (Ed.), Solids Far From Equilibrium, Cambridge University Press, Cambridge, 1991.
4. A. Pimpinelli, J. Villain, Physics of Crystal Growth, Cambridge University Press, Cambridge, 1998.
5. A.L. Barabási, H.E. Stanley, Fractals Concepts in Surface Growth, Cambridge University Press, Cambridge, 1995.
6. Tang L.H., Nattermann T. Kinetic roughening in molecular-beam epitaxy. Phys. Rev. Lett. 66:1991;2899.
7. Heyraud J.C., Métois J.J., Bermond J.M. The roughening transition of the Si(113) and Si(110) surfaces. Surf. Sci. 425:1999;48.
8. P.V. Hobbs, Ice Physics, Clarendon Press, Oxford, 1974.
9. D.P. Woodruff, The Solid-Liquid Interface, Cambridge University Press, Cambridge, 1973.
10. P. Pelcé (Ed.), Dynamics of Curved Fronts, Academic Press, New York, 1988.
11. Langer J.S. Theory of spinodal decomposition in alloys. Ann. Phys. 65:1971;53-86.
12. Y. Pomeau, M. Ben Amar, Dendritic growth and related topics, in: C. Godrèche (Ed.), Solids Far From Equilibrium, Cambridge Univ. Press, Cambridge, 1992.
13. B. Caroli, C. Caroli, B. Roulet, Instabilities of planar solidification fronts, in: C. Godrèche (Ed.), Solids Far From Equilibrium, Cambridge Univ. Press, Cambridge, 1992.
14. Witten T.A., Sander L.M. Diffusion-limited aggregation, a kinetic critical phenomenon. Phys. Rev. Lett. 47:1981;1400.
15. Witten T.A., Sander L.M. Diffusion-limited aggregation. Phys. Rev. B. 27:1983;5686.
16. Mason B.J. Snow crystals, natural and man made. Contemp. Phys. 33:1992;227.
17. Mullins W.W., Sekerka R.F. Morphological stability of a particle growing by diffusion or heat flow. J. Appl. Phys. 34:1963;323.
18. Mullins W.W., Sekerka R.F. Stability of a planar interface during solidification of a dilute binary alloy. J. Appl. Phys. 35:1963;444.
19. L. Pietronero, E. Tosatti (Eds.), Fractals in Physics, North-Holland, Amsterdam, 1986.
20. P. Meakin, Some recent advances in the simulation of diffusion limited aggregation and related processes, in: L. Pietronero, E. Tosatti (Eds.), Fractals in Physics, North-Holland, Amsterdam, 1986, p. 205.
21. A. Arneodo, F. Argoul, Y. Couder, M. Rabaud, Diffusion controlled growth phenomena: from smooth interfaces to fractal structures, in: M. Ben Amar, P. Pelcé, P. Tabeling (Eds.), Growth and Form: Nonlinear Aspects, Plenum, New York, 1991, p. 297.
22. B.A. Joyce, D.D. Vvedensky, C.T. Foxon, Handbook on semiconductors, Vol. 3, 1994, p. 275.
23. Jankovski A.F. Superhardnen effect in Au/Ni multilayers. J. Magn. Magn. Mater. 126:1993;185.
24. Hermann P., Guigner J.M., Tardy B., Jugnet Y., Simon D., Bertolini J.C. The Pd/Ni(110) bi-metallic system. Surface characterization by LEED, AES, XPS and LEIS techniques. New insights on catalytic properties. J. Catal. 163:1996;169.
25. Gradmann U. Magnetic surface anisotropies. J. Magn. Magn. Mater. 54-57:1986;733.
26. Den Broeder F.J.A., Howings W., Bloemen P.J.H. Magnetic anisotropy of multilayers. J. Magn. Magn. Mater. 93:1991;562.
27. Hug H.J., Steifel B., Moser A., Parashikv I., Klicznik A., Lipp D., Guntherodt H.J., Bochi G., Paul D.I., O'Handley R.C. Magnetic domain structure in ultrathin Cu/Ni/Cu/Si(001) films. J. Appl. Phys. 79:1996;5609.
28. Cebollada A., Weller D., Sticht J., Harp G.R., Farrow R.F.C., Marks R.F., Savoy R., Scott J.C. Enhanced magneto-optical Kerr effect in spontaneously ordered FePt alloys: Quantitative agreement between theory and experiment. Phys. Rev. B. 50:1994;3419.
29. Gehanno V., Marty A., Gilles B., Samson Y. Magnetic domains in epitaxial ordered FePd(001) thin films with perpendicular magnetic anisotropy. Phys. Rev. B. 55:1997;12552.
30. Parkin S.S.P., More N., Roche K.P. Oscillations in exchange coupling and magnetoresistance in metallic superlattice structures: Co/Ru, Co/Cr, and Fe/Cr. Phys. Rev. Lett. 64:1990;2304.
31. Baibich N.M., Broto J.M., Fert A., Nguyen Van Dau F., Petroff F., Etienne P., Creuset G., Friederich A., Chazelas J. Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. Phys. Rev. Lett. 61:1988;2472.
32. Šmilauer P., Vvedensky D.D. Step-edge barriers on GaAs(001). Phys. Rev. B. 48:1993;17 603-17 606.
33. Zangwill A., Luse C.N., Vvedensky D.D., Wilby M.R. Equations of motion for epitaxial growth. Surf. Sci. Lett. 274:1992;L529-L534.
34. Myers-Beaghton A.K., Vvedensky D.D. Nonlinear equation for diffusion and adatom interactions during epitaxial growth on vicinal surfaces. Phys. Rev. B. 42:1990;5544.
35. Tersoff J., Johnson M.D., Orr B.G. Adatom densities on GaAs: evidence for near-equilibrium growth. Phys. Rev. Lett. 78:1997;282.
36. Moison J.M., Guille C., Houzay F., Barthe F., Van Rompay M. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures. Phys. Rev. B. 40:1989;6149.
37. Ehrlich G., Hudda F.G. Atomic view of surface diffusion: tungsten on tungsten. J. Chem. Phys. 44:1966;1039.
38. R.L. Schwoebel, E.J. Shipsey, Step motion on crystal surfaces, J. Appl. Phys. 37 (1966) 3682; R.L. Schwoebel, Step motion on crystal surfaces II, J. Appl. Phys. 40 (1969) 614.
39. R.L. Schwoebel, E.J. Shipsey, Step motion on crystal surfaces, J. Appl. Phys. 37 (1966) 3682; R.L. Schwoebel, Step motion on crystal surfaces II, J. Appl. Phys. 40 (1969) 614.
40. Villain J. Continuum models for crystal growth from atomic beams with and without desorption. J. de Physique I. 1:1991;19-42.
41. Stoltze P. Simulation of surface defects. J. Phys.: Condens. Matter. 6:1994;9495.
42. Stumpf R., Scheffler M. Theory of self-diffusion and growth of Al(111). Phys. Rev. Lett. 72:1994;254.
43. Ferrando R., Tréglia G. High-temperature study of the Schwoebel effect in Au(111). Phys. Rev. Lett. 76:1996;2109-2112.
44. Kyuno K., Ehrlich G. Step-edge barriers: truths and kinetic consequences. Surf. Sci. 383:1997;L766-L774.
45. K. Bromann, H. Brune, H. Röder, K. Kern, Interlayer mass transport in homoepitaxial metal growth, Phys. Rev. Lett. 75 (1995) 677-680; J.A. Meyer, J. Vrijmoeth, H.A. van der Vegt, E. Vlieg, R.J. Behm, Importance of the additional step-edge barrier in determining film morphology during epitaxial growth, Phys. Rev. B 51 (1995) 14790-14793; P. Šmilauer, S. Harris, Determination of step-edge barriers to interlayer transport from surface morphology during the initial stages of homoepitaxial growth, Phys. Rev. B 51 (1995) 14 798-14 801; I. Markov, Method for evaluation of the Ehrlich-Schwoebel barrier to interlayer transport in metal homoepitaxy, Phys. Rev. B 54 (1996) 17930-17937.
46. K. Bromann, H. Brune, H. Röder, K. Kern, Interlayer mass transport in homoepitaxial metal growth, Phys. Rev. Lett. 75 (1995) 677-680; J.A. Meyer, J. Vrijmoeth, H.A. van der Vegt, E. Vlieg, R.J. Behm, Importance of the additional step-edge barrier in determining film morphology during epitaxial growth, Phys. Rev. B 51 (1995) 14790-14793; P. Šmilauer, S. Harris, Determination of step-edge barriers to interlayer transport from surface morphology during the initial stages of homoepitaxial growth, Phys. Rev. B 51 (1995) 14 798-14 801; I. Markov, Method for evaluation of the Ehrlich-Schwoebel barrier to interlayer transport in metal homoepitaxy, Phys. Rev. B 54 (1996) 17930-17937.
47. K. Bromann, H. Brune, H. Röder, K. Kern, Interlayer mass transport in homoepitaxial metal growth, Phys. Rev. Lett. 75 (1995) 677-680; J.A. Meyer, J. Vrijmoeth, H.A. van der Vegt, E. Vlieg, R.J. Behm, Importance of the additional step-edge barrier in determining film morphology during epitaxial growth, Phys. Rev. B 51 (1995) 14790-14793; P. Šmilauer, S. Harris, Determination of step-edge barriers to interlayer transport from surface morphology during the initial stages of homoepitaxial growth, Phys. Rev. B 51 (1995) 14 798-14 801; I. Markov, Method for evaluation of the Ehrlich-Schwoebel barrier to interlayer transport in metal homoepitaxy, Phys. Rev. B 54 (1996) 17930-17937.
48. K. Bromann, H. Brune, H. Röder, K. Kern, Interlayer mass transport in homoepitaxial metal growth, Phys. Rev. Lett. 75 (1995) 677-680; J.A. Meyer, J. Vrijmoeth, H.A. van der Vegt, E. Vlieg, R.J. Behm, Importance of the additional step-edge barrier in determining film morphology during epitaxial growth, Phys. Rev. B 51 (1995) 14790-14793; P. Šmilauer, S. Harris, Determination of step-edge barriers to interlayer transport from surface morphology during the initial stages of homoepitaxial growth, Phys. Rev. B 51 (1995) 14 798-14 801; I. Markov, Method for evaluation of the Ehrlich-Schwoebel barrier to interlayer transport in metal homoepitaxy, Phys. Rev. B 54 (1996) 17930-17937.
49. Morgenstern K., Rosenfeld G., Laegsgaard E., Besenbacher F., Comsa G. Measurement of energies controlling ripening and annealing on metal surfaces. Phys. Rev. Lett. 80:1998;556.
50. D.J. Eaglesham, G.H. Gilmer, Roughening during Si deposition at low temperature, in: R. Jullien, J. Kertèsz, P. Meakin, D.E. Wolf (Eds.), Surface Disordering: Growth, Roughening and Phase Transition, Nova Science, New York, 1993.
51. Lanczycki C.J., Kotlyar R., Fu E., Yang Y.-N., Williams E.D., Das Sarma S. Growth of Si on the Si(111) surface. Phys. Rev. B. 57:1998;13132-13148.
52. Kodiyalam S., Khor K.E., Das Sarma S. Calculated Schwoebel barriers on Si(111) steps using an empirical potential. Phys. Rev. B. 53:1996;9913.
53. M.C. Desjonquères, D. Spanjaard, Concepts in Surface Physics, Springer Series in Surface Science, Vol. 30, Springer, Heidelberg, 1993.
54. Van Nostrand J.E., Jay Chey S., Hasan M.-A., Cahill D.G., Greene J.E. Surface morphology during multilayer epitaxial growth of Ge(001). Phys. Rev. Lett. 74:1995;1127-1130.
55. Van Nostrand J.E., Jay Chey S., Cahill D.G. Low-temperature growth morphology of singular and vicinal Ge(001). Phys. Rev. B. 57:1998;12536-12543.
56. Orme C., Johnson M.D., Sudijono J.L., Leung K.T., Orr B.G. Large scale surface structure formed during GaAs (001) homoepitaxy. Appl. Phys. Lett. 64:1994;860-862.
57. Johnson M.D., Orme C., Hunt A.W., Graff D., Sudijono J., Sander L.M., Orr B.G. Stable and unstable growth in molecular beam epitaxy. Phys. Rev. Lett. 72:1994;116-119.
58. Bales G.S., Zangwill A. Morphological instability of a terrace edge during step flow growth. Phys. Rev. B. 41:1990;5500.
59. J.W. Cahn, J.E. Hilliard, Free energy of a nonuniform system. I. Interfacial free energy, J. Chem. Phys. 28 (1958) 258; J.W. Cahn, Free energy of a nonuniform system. II. Thermodynamic basis, J. Chem. Phys. 30 (1959) 1121.
60. J.W. Cahn, J.E. Hilliard, Free energy of a nonuniform system. I. Interfacial free energy, J. Chem. Phys. 28 (1958) 258; J.W. Cahn, Free energy of a nonuniform system. II. Thermodynamic basis, J. Chem. Phys. 30 (1959) 1121.
61. Elkinani I., Villain J. Growth roughness and instability due to the Schwoebel effect: a one-dimensional model. J. de Physique I. 1:1994;1991.
62. D. Wolf, Computer simulation of molecular beam epitaxy, in: A. McKane et al. (Eds.), Scale invariance, interfaces, and non-equilibrium dynamics, Plenum Press, New York, 1995. E. Somfai, D.E. Wolf, J. Kertész, Correlated island nucleation in layer-by-layer growth. J. de Physique I 6 (1996) 393.
63. D. Wolf, Computer simulation of molecular beam epitaxy, in: A. McKane et al. (Eds.), Scale invariance, interfaces, and non-equilibrium dynamics, Plenum Press, New York, 1995. E. Somfai, D.E. Wolf, J. Kertész, Correlated island nucleation in layer-by-layer growth. J. de Physique I 6 (1996) 393.
64. Politi P., Villain J. The Ehrlich-Schwoebel instability in Molecular Beam Epitaxy: a minimal model. Phys. Rev B. 54:1996;5114.
65. H. Kallabis, Theoretical aspects of crystal growth, Ph.D. Thesis, Jülich, December 1997. Jül-3483.
66. Burton W.K., Cabrera N., Frank F. The growth of crystals and the equilibrium structure of their surfaces. Philos. Trans. Roy. Soc. 243:1951;299.
67. Plischke M., Liu D., Rácz Z. Time-reversal invariance and universality of two-dimensional growth models. Phys. Rev. B. 35:1987;3485.
68. Vvedensky D.D., Zangwill A., Luse C.N., Wilby M.R. Stochastic equations of motion for epitaxial growth. Phys. Rev. E. 48:1993;852-862.
69. Predota M., Kotrla M. Stochastic equations for simple discrete models of epitaxial growth. Phys. Rev. E. 54:1966;3933.
70. Krug J., Dobbs H.T., Majaniemi S. Adatom mobility for the solid-on-solid model. Z. Phys. B. 97:1995;281-291.
71. Krug J. Origins of scale invariance in growth processes. Adv. Phys. 46:1997;139-282.
72. Politi P. Different regimes in the Ehrlich-Schwoebel instability. J. de Physique I. 7:1997;797-806.
73. Siegert M., Plischke M. Slope selection and coarsening in molecular beam epitaxy. Phys. Rev. Lett. 73:1994;1517.
74. Siegert M. Ordering dynamics of surfaces in molecular beam epitaxy. Physica A. 239:1997;420-427.
75. Stroscio J.A., Pierce D.T., Stiles M.D., Zangwill A., Sander L.M. Coarsening of unstable surface features during Fe(001) homoepitaxy. Phys. Rev. Lett. 75:1995;4246.
76. Evans J.W. Factors mediating smoothness in epitaxial thin-film growth. Phys. Rev. B. 43:1991;3897-3905.
77. Chame A., Rousset S., Bonzel H.P., Villain J. Slow dynamics of step surfaces. Bulg. Chem. Commun. 29:1996/97;398.
78. Mullins W.W. Theory of thermal grooving. J. Appl. Phys. 28:1957;333.
79. Stroscio J.A., Pierce D.T. Scaling of diffusion-mediated island growth in iron-on-iron homoepitaxy. Phys. Rev. B. 49:1994;8522-8525.
80. P. Politi, J. Villain, Kinetic coefficients in a system far from equilibrium, in: M. Scheffler, M. Tringides (Eds.), Surface diffusion: Atomistic and Collective Processes, Plenum Press, 1997.
81. J. Krug, Continuum equations for step flow growth, in: D. Kim et al. (Eds.), Dynamics of fluctuating interfaces and related phenomena, World Scientific, Singapore, 1997.
82. Sun T., Guo H., Grant M. Dynamics of driven interfaces with a conservation law. Phys. Rev. A. 40:1989;6763.
83. Ernst H.J., Fabre F., Folkerts R., Lapujoulade J. Observation of a growth instability during low temperature molecular beam epitaxy. Phys. Rev. Lett. 72:1994;112.
84. Jorritsma L.C., Bijnagte M., Rosenfeld G., Poelsema B. Growth anisotropy and pattern formation in metal epitaxy. Phys. Rev. Lett. 78:1997;911-914.
85. Zuo J.-K., Wendelken J.F. Evolution of mound morphology in reversible homoepitaxy on Cu(100). Phys. Rev. Lett. 78:1997;2791-2794.
86. Thürmer K., Koch R., Weber M., Rieder K.H. Dynamic evolution of pyramid structures during growth of epitaxial Fe(001) films. Phys. Rev. Lett. 75:1995;1767.
87. Tsui F., Wellman J., Uher C., Clarke Roy Morphology transition and layer-by-layer growth of Rh(111). Phys. Rev. Lett. 76:1996;3164-3167.
88. E. Somfai, L.M. Sander, Coarsening of MBE structures in 2+1 dimensions, in: P.M. Duxbury, T.J. Pence (Eds.), Dynamics of crystal surfaces and interfaces, Plenum Press, 1997.
89. Hunt A.W., Orme C., Williams D.R.M., Orr B.G., Sander L.M. Instabilities in MBE growth. Europhys. Lett. 27:1994;611.
90. P. Politi, A. Torcini, Coarsening process in growth models without slope selection, Preprint, 1999.
91. Kawasaki K., Ohta T. Kink dynamics in one-dimensional nonlinear systems. Physica. 116A:1982;573.
92. Kawakatsu T., Munakata T. Kink dynamics in a one-dimensional conserved TDGL system. Prog. Theor. Phys. 74:1985;11.
93. Siegert M., Plischke M. Formation of pyramids and mounds in molecular beam epitaxy. Phys. Rev. E. 53:1996;307-318.
94. Bray A.J. Theory of phase ordering kinetics. Adv. Phys. 43:1994;357.
95. Siegert M., Plischke M., Zia R.K.P. Contrasts between coarsening and relaxation dynamics of surfaces. Phys. Rev. Lett. 78:1997;3705-3708.
96. Martin Rost, private communication.
97. Siegert M. Coarsening dynamics of crystalline thin films. Phys. Rev. Lett. 81:1998;5481-5484.
98. Politi P. Kink dynamics in a one-dimensional growing surface. Phys. Rev. E. 58:1998;281.
99. Tang Lei-Han, Šmilauer P., Vvedensky D.D. Noise-assisted mound coarsening in epitaxial growth. Eur. Phys. J. B. 2:1998;409.
100. J. Krug, Nonequilibrium surface dynamics with volume conservation, in: V. Privman (Ed.), Nonequilibrium Statistical Mechanics in One Dimension, Cambridge University Press, Cambridge, 1997.
101. Šmilauer P., Vvedensky D.D. Coarsening and slope evolution during unstable epitaxial growth. Phys. Rev. B. 52:1995;14263.
102. Amar J.G., Family F. Effects of crystalline microstructure on epitaxial growth. Phys. Rev. B. 54:1996;14742-14753.
103. Thürmer K., Koch R., Schilbe P., Rieder K.H. Pyramidal growth on bcc(001) stabilizes facets close to {012}: a Monte Carlo study. Surf. Sci. 395:1998;12-22.
104. J.P. van der Eerden, H. Müller-Krumbhaar, Dynamic coarsening of crystal surfaces by formation of macrosteps, Phys. Rev. Lett. 57 (1986) 2431; D. Kandel, J.D. Weeks, Step motion, patterns, and kinetic instabilities on crystal surfaces, Phys. Rev. Lett. 72 (1994) 1678; Step bunching as a chaotic pattern formation process, Phys. Rev. Lett. 69 (1992) 3758.
105. J.P. van der Eerden, H. Müller-Krumbhaar, Dynamic coarsening of crystal surfaces by formation of macrosteps, Phys. Rev. Lett. 57 (1986) 2431; D. Kandel, J.D. Weeks, Step motion, patterns, and kinetic instabilities on crystal surfaces, Phys. Rev. Lett. 72 (1994) 1678; Step bunching as a chaotic pattern formation process, Phys. Rev. Lett. 69 (1992) 3758.
106. J.P. van der Eerden, H. Müller-Krumbhaar, Dynamic coarsening of crystal surfaces by formation of macrosteps, Phys. Rev. Lett. 57 (1986) 2431; D. Kandel, J.D. Weeks, Step motion, patterns, and kinetic instabilities on crystal surfaces, Phys. Rev. Lett. 72 (1994) 1678; Step bunching as a chaotic pattern formation process, Phys. Rev. Lett. 69 (1992) 3758.
107. M. Uwaha, Y. Saito, Kinetic smoothing and roughening of a step with surface diffusion, Phys. Rev. Lett. 68 (1992) 224-227; Y. Saito, M. Uwaha, Fluctuation and instability of steps in a diffusion field, Phys. Rev. B 49 (1994) 10677-10692.
108. M. Uwaha, Y. Saito, Kinetic smoothing and roughening of a step with surface diffusion, Phys. Rev. Lett. 68 (1992) 224-227; Y. Saito, M. Uwaha, Fluctuation and instability of steps in a diffusion field, Phys. Rev. B 49 (1994) 10677-10692.
109. S. Stoyanov, Electromigration induced step bunching on Si surfaces - How does it depend on the temperature and heating current direction?, Jpn. J. Appl. Phys. 30 (1991) 1; H. Yasunaga, A. Natori, Electromigration on semiconductor surfaces, Surf. Sci. Rep. 15 (1992) 207-280.
110. S. Stoyanov, Electromigration induced step bunching on Si surfaces - How does it depend on the temperature and heating current direction?, Jpn. J. Appl. Phys. 30 (1991) 1; H. Yasunaga, A. Natori, Electromigration on semiconductor surfaces, Surf. Sci. Rep. 15 (1992) 207-280.
111. Pimpinelli A., Elkinani I., Karma A., Misbah C., Villain J. Step motions on high-temperature vicinal surfaces. J. Phys.: Condens. Matter. 6:1994;2661.
112. Bena I., Misbah C., Valance A. Nonlinear evolution of a terrace edge during step-flow growth. Phys. Rev. B. 47:1993;7408.
113. Karma A., Misbah C. Competition between noise and determinism in step flow growth. Phys. Rev. Lett. 71:1993;3810-3813.
114. Pierre-Louis O., Misbah C., Saito Y., Krug J., Politi P. New nonlinear evolution equation for steps during MBE on vicinal surfaces. Phys. Rev. Lett. 80:1998;4221.
115. Rost M., Šmilauer P., Krug J. Unstable epitaxy on vicinal surfaces. Surf. Sci. 369:1996;393-402.
116. O. Pierre-Louis, Instabilité, dynamique non-linéaire et fluctuations des surfaces vicinales hors de l'équilibre, Ph.D. Thesis, Université de Grenoble I, 1997. Unpublished.
117. O. Pierre-Louis, C. Misbah, Dynamics and fluctuations during M.B.E. on vicinal surfaces I: formalism and results of the linear theory; Phys. Rev. B 58 (1998) 2259-2275. Dynamics and fluctuations during M.B.E. on vicinal surfaces II: non-linear analysis, ibidem, 2276-2288.
118. O. Pierre-Louis, C. Misbah, Dynamics and fluctuations during M.B.E. on vicinal surfaces I: formalism and results of the linear theory; Phys. Rev. B 58 (1998) 2259-2275. Dynamics and fluctuations during M.B.E. on vicinal surfaces II: non-linear analysis, ibidem, 2276-2288.
119. Krug J., Schimschak M. Metastability of step flow growth in 1+1 dimensions. J. de Physique I. 5:1996;1065-1086.
120. Y. Kuramoto, Chemical Oscillations Waves and Turbulence, Springer, Berlin, 1984.
121. Saito Y., Uwaha M. Anisotropy effect on step morphology described by Kuramoto-Sivashinsky equation. J. Phys. Soc. Jpn. 65:1996;3576-3581.
122. Pierre-Louis O., Misbah C. Out-of-equilibrium step meandering on a vicinal surface. Phys. Rev. Lett. 76:1996;4761-4764.
123. Rost M., Krug J. Anisotropic Kuramoto-Sivashinsky equation for surface growth and erosion. Phys. Rev. Lett. 75:1995;3894-3897.
124. J.Y. Tsao, Material Fundamentals of Molecular Beam Epitaxy, Academic Press, Boston, 1993.
125. Krug J. On the shape of wedding cakes. J. Stat. Phys. 87:1997;505-518.
126. Schwenger L., Folkerts R.L., Ernst H.-J. Bales-Zangwill meandering instability observed in homoepitaxial step-flow growth. Phys. Rev. B. 55:1997;R7406-R7409.
127. Tung R.T., Schrey F. Topography of the Si(111) surface during silicon Molecular Beam Epitaxy. Phys. Rev. Lett. 63:1989;1277-1280.
128. Tejedor P., Šmilauer P., Roberts C., Joyce B.A. Surface morphology evolution during unstable homoepitaxial growth of GaAs(110). Phys. Rev. B. 59:1999;2341-2345.
129. Karunasiri R.P.U., Bruinsma R., Rudnick J. Thin film Growth and the shadow instability. Phys. Rev. Lett. 62:1989;788.
130. R. Bruinsma, R.P.U. Karunasiri, J. Rudnick, Growth and erosion of thin solid films, in: M.G. Lagally (Ed.), Kinetics of Ordering and Growth at Surfaces, Plenum, New York, 1990.
131. H.J. Leamy, G.A. Gilmer, A.G. Dirks, The microstructure of vapor deposited films, in: E. Kaldis (Ed.), Current Topics in Materials Science, North-Holland, Amsterdam, 1980.
132. Hodgkinson I.J., Wilson P.W. Microstructural-induced anisotropy in thin films for optical applications. CRC Crit. Rev. Solid State and Mater. Sci. 15:1988;27-61.
133. Gau J.S. Magnetic properties of oblique-evaporated Co-Ni thin films. J. Magn. Magn. Mater. 80:1989;290-298.
134. Nieuwenhuizen J.M., Hanstra H.B. Mikrofraktographie dünner Schichten. Philips Technische Rundschau. 27:1966;177-181.
135. Lichter S., Chen H. Model for columnar microstructure of thin solid films. Phys. Rev. Lett. 56:1986;1396-1399.
136. Krug J., Meakin P. Columnar growth in oblique incidence ballistic deposition: Faceting, noise reduction and mean-field theory. Phys. Rev. A. 43:1991;900-919.
137. Krug J. The columnar growth angle in obliquely evaporated thin films. Materialwissenschaft und Werkstofftechnik. 26:1995;22.
138. A. Chamberod, J. Hillairet (Eds.), Metallic Multilayers, Materials Science Forum 59-60, Transtech Publications, Aedermannsdorf, 1990.
139. B.K. Chakraverty, Grain size distribution in thin films, J. Phys. Chem. Sol. 28 (1967) 2401 and 2413.
140. Avignon M., Chakraverty B.K. Morphological stability of two-dimensional nucleus. Proc. Roy. Soc. A. 310:1969;277.
141. Avignon M. Role of interface kinetics on the shape stability of a two-dimensional nucleus on a substrate. J. Crystal Growth. 11:1971;265.
142. Frank F.C., van der Merve J.H. One-dimensional dislocations. I. Static theory. Proc. Roy. Soc. A. 189:1949;205-225.
143. 1-x/(100)Si heterostructures Appl. Phys. Lett. 57:1990;2124.
144. D.D. Perovic, D.C. Houghton, Barrierless misfit dislocation nucleation in SiGe/Si strained layer epitaxy, Mechanisms of Heteroepitaxy and Growth Symposium, vol. 514, Mater. Res. Soc., Pittsburgh, PA, USA, 1992, p. 391.
145. 1-x/Si system J. Vac. Sci. Technol. A7:1989;2580.
146. Matthews J.W. Defects associated with the accommodation of misfit between crystals. J. Vac. Sci. Technol. 12:1975;126.
147. Freund L.B. A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its path. J. Appl. Phys. 68:1990;2073.
148. A. Bourret, J. Desseaux-Thibault, F. Lançon, La structure du coeur des dislocations dans le silicium CZ étudié par microscopie électronique, J. de Phys. Colloque C4, 44 (1983) C4.15-C4.24.
149. Nandedkar A.S., Narayan J. Atomic structure of dislocations in silicon, germanium and diamond. Philos. Mag. A61:1990;873.
150. M.A. Hermann, H. Sitter, Molecular Beam Epitaxy, in: M.B. Panish (Ed.), Springer Series in Materials Science 7, Springer, Berlin, Heidelberg, 2nd Edition, 1996, p. 290.
151. J.P. Hirth, J. Lothe, Theory of Dislocations, McGraw-Hill, New York, 1982.
152. Maree P.M.J., Barbour J.C., Van der Veen J.F., Kavanagh K.L., Bule-Lieuwma C.W.T., Viegers M.P.A. Generation of misfit dislocations in semiconductors. J. Appl. Phys. 62:1987;4413.
153. Dynna M., Marty A., Gilles B., Patrat G. Ordering and the relaxation of elastic strain in thin Au-Ni films grown on Au(001). Acta Mater. 44:1996;4417.
154. Willis J.R., Jain S.C., Bullough R. The energy of an array of dislocations: implications for strain relaxation in semiconductor heterostructures. Philos. Mag. A62:1990;115.
155. 1-x strained epilayers Philos. Mag. A65:1992;1151.
156. 1-y films grown on (100) InP substrates Acta Metall. Mater. 42:1994;1661.
157. A.K. Head, Proc. Phys. Soc. 66B (1953) 793.
158. C.A.B. Ball, J.H. van der Merwe, The growth of dislocation-free layers, in: F.R.N. Nabarro (Ed.), Dislocations in Solids, North-Holland, Amsterdam, 1983 (Chapter 27).
159. Kasper E. Growth and properties of Si/SiGe Superlattices. Surf. Sci. 174:1986;630.
160. Vassent J.L., Dynna M., Marty A., Gilles B., Patrat G. A study of growth and the relaxation of elastic strain in MgO on Fe(001). J. Appl. Phys. 80:1996;5727-5735.
161. Gosling T.J., Jain S.C., Willis J.R., Atkinson A., Bullough R. Stable configurations in strained epitaxial layers. Philos. Mag. 66:1992;119.
162. Gillard V.T., Nix W.D. Role of dislocation blocking in limiting strain relaxation in heteroepitaxial films. J. Appl. Phys. 76:1994;7280.
163. Fox B.A., Jesser W.A. The effect of frictional stress on the calculation of critical thickness in epitaxy. J. Appl. Phys. 68:1990;2801.
164. Beanland R. Dislocation multiplication mechanisms in low-misfit strained epitaxial layers. J. Appl. Phys. 77:1995;62171.
165. Ponchet A., Le Corre A., Godefroy A., Salaün S., Poudoulec A. Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy. J. Crystal Growth. 153:1995;71.
166. Nötzel R., Temmyo J., Tamamura T. Self-organized growth of strained InGaAs quantum disks. Nature. 369:1994;131.
167. Nötzel R., Temmyo J., Kozen A., Tamamura T., Fukui T., Hasegawa H. Self-organization of strained GaInAs microstructures on InP(311) substrates grown by metalorganic vapor-phase epitaxy. Appl. Phys. Lett. 66:1995;2525.
168. Nishi K., Mirin R., Leonard D., Medeiro-Ribeiro G., Petroff P.M., Gossard A.C. Structural and optical characterization of InAs/InGaAs self-assembled quantum dots grown on (311)B GaAs. J. Appl. Phys. 80:1996;3466.
169. Joyce B.A., Sudijono J.L., Belk J.G., Yamaguchi H., Zhang X.M., Dobbs H.T., Zangwill A., Vvedensky D.D., Jones T.S. A scanning tunneling microscopy-reflection high energy electron diffraction-rate equation study of the molecular beam epitaxial growth of InAs on GaAs(001),(110) and (111)A - Quantum dots and two-dimensional modes. Jpn J. Appl. Phys. 36:1997;4111.
170. Goldfarb I., Hayden P.T., Owen J.H.G., Briggs G.A.D. Competing growth mechanisms of Ge/Si(001) coherent clusters. Phys. Rev. B. 56:1997;10459.
171. Madhukar A., Xie Q., Chen P., Konkar A. Nature of strained InAs three-dimensional islands formation and distribution on GaAs(100). Appl. Phys. Lett. 64:1994;2727.
172. Chen Y., Washburn J. Structural transition in Large-Lattice-Mismatch Heteroepitaxy. Phys. Rev. Lett. 77:1996;4046.
173. Ponchet A., Le Corre A., L'Haridon M., Lambert B., Salaün S., Alquier D., Lacombe D., Durand L. The effect of the growth procedure and the InAs amount on the formation of strain induced islands in the InAs/InP(001) system. Appl. Surf. Sci. 123:1998;751.
174. Johnson H.T., Freund L.B. The mechanics of coherent and dislocated island morphologies in strained epitaxial material systems. J. Appl. Phys. 81:1997;6081.
175. Kobayashi N.P., Ramachandran T.R., Chen P., Madhukar A. In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001). Appl. Phys. Lett. 68:1996;3299-3301.
176. Dobbs H.T., Vvedensky D.D., Zangwill A., Johansson J., Calsson N., Seifert W. Mean Field Theory of Quantum Dot formation. Phys. Rev. Lett. 79:1997;897.
177. Asaro R.J., Tiller W.A. Interface morphology development during stress corrosion cracking. Metall. Trans. 3:1972;1789.
178. M.Ya. Grinfeld, Instability of the separation boundary between a nonhydrostatically stressed elastic body and a melt, Dokl. Akad. Nauk SSSR 290 (1986) 1358 [Sov. Phys. Dokl. 31 (1986) 831].
179. M.Ya. Grinfeld, Instability of the separation boundary between a nonhydrostatically stressed elastic body and a melt, Dokl. Akad. Nauk SSSR 290 (1986) 1358 [Sov. Phys. Dokl. 31 (1986) 831].
180. Hack J.E., Chen S.P., Srolovitz D.J. A kinetic criterion for quasi-brittle fracture. Acta metall. 37:1989;1957-1970.
181. Yang W.H., Srolovitz D.J. Cracklike surface instabilities in stressed solids. Phys. Rev. Lett. 71:1993;1593.
182. Portz K., Maradudin A.A. Surface contribution to the low-temperature specific heat of a cubic crystal. Phys. Rev. B. 16:1977;3535.
183. L. Landau, E. Lifshitz, Theory of Elasticity, Pergamon Press, London, 1959.
184. Nozières P. Amplitude expansion for the Grinfeld instability due to uniaxial stress at a solid surface. J. de Physique I. 3:1993;681.
185. Grilhé J. Surface instabilities and dislocation formation at free surfaces of stressed solids. Europhys. Lett. 23:1993;141.
186. Kassner K., Misbah C. Nonlinear development of a uniaxially stressed solid: a route to fracture? Europhys. Lett. 28:1994;245.
187. Thiel M., Willibald A., Evers P., Levchenko A., Leiderer P., Balibar S. Stress-induced melting and surface instability of the crystals. Europhys. Lett. 20:1992;707.
188. Spencer D.S., Vorhees P.W., Davis S.H. Morphological instability in epitaxially strained dislocations-free solid films. Phys. Rev. Lett. 67:1991;3696.
189. Spencer D.S., Vorhees P.W., Davis S.H. Morphological instability in epitaxially strained dislocation-free solid films: linear stability theory. J. Appl. Phys. 73:1993;4955.
190. L. Landau, E. Lifshitz, Statistical Physics, Pergamon Press, London, 1959.
191. Venables J.A., Spiller G.D., Hanbücken M. Nucleation and growth of thin films. Rep. Prog. Phys. 47:1984;399.
192. S. Stoyanov, D. Kashchiev, Thin film nucleation and growth theories: a confrontation with experiment, in: E. Kaldis (Ed.), Current Topics in Material Science, Vol. 7, North-Holland, Amsterdam, 1981, p. 69.
193. Duport C., Politi P., Villain J. Growth instabilities induced by elasticity in a vicinal surface. J. de Physique I. 5:1995;1317-1350.
194. Voigtländer B., Zinner A. Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy. Appl. Phys. Lett. 63:1993;3055.
195. Pidduck A.J., Robbins D.J., Cullis A.G., Leong W.Y., Pitt A.M. Evolution of surface morphology and strain during SiGe epitaxy. Thin Solid Films. 222:1992;78.
196. x layers on Si J. Crystal Growth. 142:1994;78.
197. Berbézier I., Gallas B., Ronda B., Derrien J. Dependence of SiGe growth instability on Si surface orientation. Surf. Sci. 412/413:1998;415.
198. Guyer J.E., Vorhees P.W. Morphological stability of alloys thin films. Phys. Rev. B. 54:1996;11710.
199. Glas F. Thermodynamics of a stressed alloy with a free surface: Coupling between the morphological and compositional stability. Phys. Rev. B. 55:1997;11277.
200. Tersoff J. Stress-induced layer-by-layer growth of Ge on Si(100). Phys. Rev. Lett. 43:1991;9377.
201. Moison J.M., Houzay F., Barthe F., Leprince L., André E., Vatel O. Self-organized growth of regular nanometer-scale InAs dots on GaAs. Appl. Phys. Lett. 64:1994;196.
202. Grinfeld M. Two-dimensional islanding atop stressed solid helium and epitaxial films. Phys. Rev. B. 49:1994;8310.
203. Grinfeld M. Stress corrosion and stress induced surface morphology of epitaxial films. Scanning microscopy. 8:1994;869.
204. Junqua N., Grilhé J. Surface instability of epitaxial films on a substrate. J. de Physique III. 3:1993;1589.
205. 1-xAs on GaAs(100) Phys. Rev. B. 46:1992;9551.
206. Ponchet A., Le Corre A., L'Haridon M., Lambert B., Salaün S. Relationship between self-organization and size of InAs islands on InP(001) grown by gas source molecular beam epitaxy. Appl. Phys. Lett. 67:1995;1850.
207. Ponchet A., Le Corre A., L'Haridon M., Lambert B., Salaün S., Goeren J., Carles R. Structural aspects of the growth of InAs islands on InP substrate. Solid State Electron. 40:1996;615.
208. Gérard J.M., Marzin J.Y, Zimmermann G., Ponchet A., Cabrol O., Barrier D., Jusserand B., Sermage B. InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications. Solid State Electron. 40:1996;807.
209. Gérard J.M., Cabrol O., Marzin J.Y., Lebouché N., Moison J.M. Optical investigation of some statistic and kinetic aspects of the nucleation and growth of InAs islands on GaAs. Mater. Sci. Eng. B. 37:1996;8-16.
210. Priester C., Lannoo M. On the origin of self-assembled quantum dots in highly mismatched heteroepitaxy. Phys. Rev. Lett. 75:1995;93.
211. Junqua N., Grilhé J. Instability of planar interfaces between two stressed materials. Philos. Mag. Lett. 69:1994;61.
212. Sridhar N., Rickman J.M., Srolovitz D.J. Multilayer film stability. J. Appl. Phys. 82:1997;4852.
213. Leonard D., Krishnamurthy M., Reaves C.M., DenBaars S.P., Petroff P.M. Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces. Appl. Phys. Lett. 63:1993;3203.
214. Marzin J.Y, Gérard J.M., Izraël A., Barrier D., Bastard G. Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs. Phys. Rev. Lett. 73:1994;716.
215. V.A. Shchukin, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Spontaneous ordering of arrays of coherent strained islands, Phys. Rev. Lett. 75 (1995) 2968.
216. Kern R., Müller P. Elastic relaxation of coherent epitaxial deposits. Surf. Sci. 392:1997;103-133.
217. J.V. Boussinesq, Applications des potentiels à l'étude de l'équilibre et du mouvement des corps élastiques, Gauthier-Villars, Paris, 1885.
218. Tersoff J., LeGoues F.K. Competing relaxation mechanisms in strained layers. Phys. Rev. Lett. 72:1994;3570.
219. Tersoff J., Tromp R.M. Shape transition in growth of strained islands: spontaneous formation of quantum wires. Phys. Rev. Lett. 70:1993;2782.
220. C. Duport, C. Priester, J. Villain, Equilibrium shapes of a coherent epitaxial cluster, in: Zh. Zhang, M. Lagally (Eds.), Morphological Organization in Epitaxial Growth and Removal, World Scientific Series on Directions in Condensed Matter Physics, 1997.
221. C. Duport, Élasticité et croissance cristalline, Ph.D. Thesis, Université de Grenoble, 1996.
222. A. Ponchet, L. Durand, J.M. Cardona, unpublished, 1998.
223. L.B. Freund, H.T. Johnson, R.V. Kukta, Observations on the mechanics of strained epitaxial island growth, Proceedings of the Materials Research Society Fall Meeting, Boston, 1995.
224. Moll N., Scheffler M., Pehlke E. The influence of surface stress on the equilibrium shape of strained quantum dots. Phys. Rev. B. 58:1998;4566.
225. Ling C.B. On the stresses in a notched plate under tension. J. Math. and Phys. 26:1948;284.
226. Weinel E., Ang Z. Die Spannungserhöhung durch Kreisbogenkerben. Math. Mech. 21:1941;228-230.
227. Isibasi, Stresses in a semi-infinite plate with a circular notch under uniform tension, Memoirs of the Faculty of Engineering, Kyushu Imperial University, Fukuoka, Japan, IX 1940 pp. 131-143.
228. Androussi Y., François P., Lefebvre A., Priester C., Lefebvre I., Allan G., Lannoo M., Moison J.M., Lebouche N., Barthe F. Evolution of thin film and surface: structure and morphology. Mat. Res. Soc. Symp. Proc. 355:1995;569.
229. E. Pehlke, N. Moll, M. Scheffler, in: M. Scheffler, R. Zimmermann (Eds.), The equilibrium shape of Quantum dots, Proc. 23rd Int. Conf. on the Physics of Semiconductors, World Scientific, Singapore, 1996, p. 301.
230. Mo Y.W., Savage D.E., Schwartzengruber B.S., Lagally M.G. Kinetic pathway in Stranski-Krastanov Growth of Ge on Si(001). Phys. Rev. Lett. 65:1990;1020.
231. ° C: Metastability of huts and the stability of pyramids and domes Phys. Rev. B. 58:1998;3533.
232. Floro J.A., Lucadamo G.A., Chason E., Freund L.B., Sinclair M., Twesten R.D., Hwang R.Q. SiGe island shape transitions induced by elastic repulsion. Phys. Rev. Lett. 80:1998;4717.
233. Rudra A., Houdré R., Carlin J.F., Ilegems M. Dynamics of island formation in the growth of InAs/InP quantum well. J. Crystal Growth. 136:1994;278.
234. Houdré R., F. Carlin J., Rudra A., Ling J., Ilegems M. Formation and optical properties of islands in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy. Superlattices Microstruct. 13:1993;67.
235. Lambert B., LeCorre A., Drouot V., L'Haridon H., Loualiche S. High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 m. Semicond. Sci. Technol. 13:1998;143.
236. Colocci M., Bogani F., Carraresi L., Mattolini M., Bosacchi A., Franchi S., Frigeri P., Rosa-Clot M., Taddei S. Growth patterns of self-assembled quantum dots near the two-dimensional to three-dimensional transition. Appl. Phys. Lett. 70:1997;3140.
237. Zinke-Allmang M., Feldman L.C., van Saarloos W. Experimental Study of Self-similarity in the coalescence growth regime. Phys. Rev. Lett. 68:1992;2358.
238. G. Zinnsmeister, Theory of thin film condensation. Part B: solution of the simplified condensation equation; Thin Solid Films 2 (1968) 497. Theory of thin film condensation. Part D: influence of a variable collision factor, ibidem, 7 (1971) 51.
239. G. Zinnsmeister, Theory of thin film condensation. Part B: solution of the simplified condensation equation; Thin Solid Films 2 (1968) 497. Theory of thin film condensation. Part D: influence of a variable collision factor, ibidem, 7 (1971) 51.
240. Bales G.S., Chrzan D.C. Dynamics of irreversible island growth during submonolayer epitaxy. Phys. Rev. B. 50:1994;6057.
241. Bartelt M.C., Evans J.W. Scaling analysis of diffusion-mediated island growth in surface adsorption processes. Phys. Rev. B. 46:1992;12675.
242. H.T. Dobbs, A. Zangwill, D.D. Vvedensky, Nucleation and growth of coherent quantum dots: a mean field theory, in: M.C. Tringides, M. Scheffler (Eds.), Diffusion: Atomistic and Collective Processes, Plenum, New York, 1997.
243. W. Ostwald, Foundation of Analytical Chemistry, McMillan, London, 1908, p. 22.
244. Lifshitz I.M., Slyozov V.V. The kinetics of precipitation from supersaturated solid solutions. J. Phys. Chem. Solids. 19:1961;35.
245. Villain J. Healing of a rough surface. Europhys. Lett. 2:1986;531.
246. Ross F.M., Tersoff J., Tromp R.M. Coarsening of self-assembled Ge quantum dots on Si(001). Phys. Rev. Lett. 80:1998;984.
247. Duport C., Nozières Ph., Villain J. New instability in molecular beam epitaxy. Phys. Rev. Lett. 74:1995;134.
248. Barabàsi A.L. Self assembled island formation in heteroepitaxial growth. Appl. Phys. Lett. 70:1997;2565.
249. Carlin J.F., Rudra A., Houdré R., Ruterana P., Ilegems M. Effect of growth interruptions on ultra-thin InAs/InP quantum well grown by CBE. J. Crystal Growth. 120:1992;155-156.
250. Ratsch C., Šmilauer P., Vvedensky D.D., Zangwill A. Mechanism for coherent island formation during heteroepitaxy. J. Physique I. 6:1996;575.
251. Schroeder M., Wolf D.E. Diffusion on strained surfaces. Surf. Sci. 375:1997;129-140.
252. Tersoff J. Enhanced nucleation and enrichment of strained-alloy quantum dots. Phys. Rev. Lett. 81:1998;3183.
253. Priester C., Lannoo M. Enhancement of alloy segregation due to strain assisted atomic diffusion in heteroepitaxy. Appl. Surf. Sci. 123:1998;658.
254. Tilmann K., Thust A., Lentzen M., Swiatek P., Förster A., Urban K., Laufs W., Gerthsen D., Remmele T., Rosenauer A. Determination of segregation, elastic strain and thin-foil relaxation in InGaAs islands on GaAs(0 0 1) by HRTEM. Philos. Mag. Lett. 74:1996;309.
255. Grandjean N., Massies J., Tottereau O. Surface segregation in GaInAs/GaAs quantum boxes. Phys. Rev. B. 55:1997;10189.
256. Medeiros-Ribeiro G., Hayden P.T., Owen J.H.G., Briggs G.A.D. Shape transition of Germanium nanocrystals on a Silicon(001) surface from pyramids to domes. Science. 279:1998;353.
257. Jesson D.E., Chen K.M., Pennycook S.J. Self-limiting growth of strained faceted islands. Phys. Rev. Lett. 80:1998;5156.
258. Jesson D.E., Chen G., Chen K.M., Pennycook S.J. Kinetic pathways to strain relaxation in the SiGe system. MRS Bull. 21:1996;31.
259. Gallas B., Berbézier I., Chevrier J., Derrien J. Gallium-mediated homoepitaxial growth of silicon at low temperature. Phys. Rev. B. 54:1996;4919.
260. Voigtländer B., Zinner A., Weber T., Bonzel H.P. Modification of growth kinetics in surfactant-mediated epitaxy. Phys. Rev. B. 51:1995;7583.
261. Copel M., Reuter M.C., Kaxiras E., Tromp R.M. Surfactants in epitaxial growth. Phys. Rev. Lett. 63:1989;632.
262. Copel M., Reuter M.C., Horn von Hoegen M., Tromp R.M. Influence of surfactants in Ge and Si epitaxy on Si(001). Phys. Rev. B. 42:1990;11682.
263. Eaglesham D.J., Unterwald F.C., Jacobson D.C. Growth morphology and the equilibrium shape: the role of "surfactants" in Ge/Si island formation. Phys. Rev. Lett. 70:1993;966.
264. Reuter M.C., Tromp R.M. Defect self-annihilation in surfactant-mediated epitaxial growth. Phys. Rev. Lett. 67:1991;1130.
265. Rosenfeld G., Servaty R., Teichert C., Poelsema B., Comsa G. Layer-by-layer growth of Ag on Ag(111) induced by enhanced nucleation: a model study for surfactant-mediated growth. Phys. Rev. Lett. 71:1993;895.
266. Kandel D., Kaxiras E. Surfactant mediated crystal growth of semiconductors. Phys. Rev. Lett. 75:1995;2742.
267. Schroeder K., Engels B., Richard P., Blügel S. Reexchange controlled diffusion in surfactant-mediated epitaxial growth: Si on As-terminated Si(111). Phys. Rev. Lett. 80:1998;2873.
268. Markov I. Kinetics of surfactant-mediated epitaxial growth. Phys. Rev. B. 50:1994;11271.
269. Rosenfeld G., Poelsema B., Comsa G. The concept of two mobilities in homoepitaxial growth. J. Crystal Growth. 151:1995;230.
270. Grandjean N., Massies J., Etgens V.H. Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers. Phys. Rev. Lett. 69:1992;796.
271. 1-x As on GaAs(001) Appl. Phys. Lett. 61:1992;99.
272. Davidson H.N., Pickett W.E. Graphite layer formation at a diamond (111) surface step. Phys. Rev. B. 49:1994;14770.
273. Villain J., Pimpinelli A., Wolf D. Layer by layer growth in molecular beam epitaxy. Comm. Cond. Matter Phys. 16:1992;1-18.
274. Kallabis H., Krapivsky P.L., Wolf D.E. Island Distance in One-Dimensional Epitaxial Growth. Eur. Phys. J. B. 5:1998;801.
275. Golubović L. Interfacial coarsening in epitaxial growth models without slope selection. Phys. Rev. Lett. 78:1997;90-93.
276. Rost M., Krug J. Coarsening of surface structures in unstable epitaxial growth. Phys. Rev. E. 55:1997;3952.