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Volumn 101, Issue 8, 2007, Pages

High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/GexSi1-x/Si substrate

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRON MOBILITY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE MORPHOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 34247869730     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2722245     Document Type: Article
Times cited : (24)

References (16)
  • 14
    • 21544463767 scopus 로고
    • 0001-6160 10.1016/0001-6160(53)90106-0
    • P. Gay, P. B. Hirsh, and A. Kelly, Acta Metall. 0001-6160 10.1016/0001-6160(53)90106-0 1, 315 (1953).
    • (1953) Acta Metall. , vol.1 , pp. 315
    • Gay, P.1    Hirsh, P.B.2    Kelly, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.