Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

Applied Physics Letters

Volumn 77, Issue 7, 2000, Pages 981-983

  Kahng, S J ^a,c   Ha, Y H ^b,d   Moon, D W ^b   Kuk, Y ^a  

^a Seoul National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c United States of America   (United States)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001506180     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1288005     Document Type: Article

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