Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition

Journal of Electronic Materials

Volumn 32, Issue 9, 2003, Pages 976-980

  Thomas, Shawn G ^a   Bharatan, Sushil ^a   Jones, Robert E ^a   Thoma, Rainer ^a   Zirkle, Thomas ^a   Edwards, N V ^a   Liu, Ran ^a   Wang, Xiang Dong ^a   Xie, Qianghua ^a   Rosenblad, Carsten ^b   Ramm, Juergen ^b   Isella, Giovanni ^c   Von Känel, Hans ^c,d  

^a MOTOROLA INC   (United States)

^b Unaxis Balzers Ltd   (United States)

^c ETH ZURICH   (Switzerland)

^d POLITECNICO DI MILANO   (Italy)

Author keywords

Graded buffer; Optoelectronics; SiGe; Threading dislocation

Indexed keywords

CHARACTERIZATION; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; OPTOELECTRONIC DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM; SUBSTRATES;

DISLOCATION DENSITY; GRADED BUFFER; LOW ENERGY PLASMA ENHACED CHEMICAL VAPOR DEPOSITION; SILICON GERMANIDE; THREADING DISLOCATION;

SEMICONDUCTING SILICON;

EID: 0141676002     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0233-9     Document Type: Article

References (18)

1. J. John et al., Proc. Bipolar/BiCMOS Circuits Technology Meeting (Piscataway, NJ: IEEE, 2002), pp. 193-196.
2. A. Joseph et al., Proc. Bipolar/BiCMOS Circuits Technology Meeting (Piscataway, NJ: IEEE, 2001), pp. 143-146.
3. M. Racanelli et al., Int. Electron Devices Meeting (Piscataway, NJ: IEEE, 2001), pp. 336-339.
4. M. O. Tanner, M.A. Chu, K.L. Wang, M. Meshkinpour, and M.S. Goorsky, J. Cryst. Growth 157, 121 (1995).
5. A.R. Powell, S.S. Iyer, and F.K. LeGoues, Appl. Phys. Lett. 64, 1856 (1994).
6. F.K. LeGoues, A. Powell, and S. S. Iyer, J. Appl. Phys. 75, 7240 (1994).
7. Y.H. Luo, J. Wan, R.L. Forrest, J.L. Liu, M.S. Goorsky, and K.L. Wang, J. Appl. Phys. 89, 8279 (2001).
8. C.S. Peng et al., Appl. Phys. Lett. 72, 3160 (1998).
9. N. Korner, E. Beck, A. Dommann, N. Onda, and J. Ramm, Surf. Coating Technol. 76-77, 731 (1995).
10. C. Rosenblad, H.R. Deller, A. Dommann, T. Meyer, P. Schroeter, and H. von Kanel, J. Vac. Sci. Technol. A 16, 2785 (1998).
11. C. Rosenblad (Ph.D. thesis, ETH-Zürich, 2000).
12. J. Tersoff, Appl. Phys. Lett. 62, 693 (1993).
13. M.T. Currie, S.B. Samavedam, T.A. Langdo, C.W. Leitz, and E.A. Fitzgerald, Appl. Phys. Lett. 72, 1718 (1998).
14. S.B. Samavedam, M.T. Currie, T.A. Langdo, and E.A. Fitzgerald, Appl. Phys. Lett. 73, 2125 (1998).
15. J.L. Liu, C.D. Moore, G.D. U'Ren, Y.H. Luo, Y. Lu, G. Jin, S.G. Thomas, M.S. Goorsky, and K.L. Wang, Appl. Phys. Lett. 75, 1586 (1999).
16. J.L. Liu, S. Tong, Y.H. Luo, J. Wan, and K.L. Wang, Appl. Phys. Lett. 79, 3431 (2001).
17. L. Colace, G. Masini, G. Assanto, H.-C. Luan, K. Wada, and L.C. Kimerling, Appl. Phys. Lett. 76, 1231 (2000).
18. L.M. Giovane, H-C. Luan, A.M. Agarwal, and L.C. Kimerling, Appl. Phys. Lett. 78, 541 (2001).