High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2

Applied Physics Letters

Volumn 75, Issue 24, 1999, Pages 3826-3828

  Arokiaraj, J ^a   Soga, T ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005654950     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125469     Document Type: Article

References (13)

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