Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

Semiconductor Science and Technology

Volumn 21, Issue 6, 2006, Pages 775-780

  Ginige, R ^a   Corbett, B ^a   Modreanu, M ^a   Barrett, C ^a   Hilgarth, J ^b   Isella, G ^c   Chrastina, D ^c   Von Kanel H ^c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b RWE POWER AG   (Germany)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GERMANIUM; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM COMPOUNDS; SHORT CIRCUIT CURRENTS; SILICON; SOLAR CELLS;

DISLOCATION DENSITY; HIGH DISLOCATION DENSITY; SINGLE JUNCTION; VIRTUAL SUBSTRATES;

CRYSTALLINE MATERIALS;

EID: 33646754698     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/6/011     Document Type: Article

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