Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001)

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 6-9

  Wietler, Tobias F ^a   Bugiel, Eberhard ^a   Hofmann, Karl R ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Germanium; Growth mechanism; Molecular beam epitaxy (MBE); Silicon

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); GERMANIUM; LATTICE VIBRATIONS; SILICON; SURFACE ACTIVE AGENTS; THIN FILMS;

DENSITY OF DEFECTS; GROWTH MECHANISM; MICRO-ROUGH GROWTH; SUBSTRATE TEMPERATURES;

MOLECULAR BEAM EPITAXY;

EID: 33646102913     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.410     Document Type: Article

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