High-efficiency top-emitting microcavity LEDs on GaAs and GaAs/Si substrates

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 994-998

  Carlin, J F ^a   Royo, P ^a   Ilegems, M ^a   Gerard, B ^b   Marcadet, X ^b   Nagle, J ^b  

^a EPFL   (Switzerland)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

CONFORMAL EPITAXY METHOD; HOMOEPITAXIAL DEVICES; MICROCAVITY LIGHT EMITTING DIODES (MCLED);

MOLECULAR BEAM EPITAXY;

EID: 0032643213     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01512-7     Document Type: Article

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