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Journal of Applied Physics

Volumn 88, Issue 7, 2000, Pages 4048-4055

Principles of strain relaxation in heteroepitaxial films growing on compliant substrates

(2) Kastner G a Gosele U a

a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038295523 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1289810 Document Type: Article

Times cited : (29)

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