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Volumn 321, Issue 1-2, 1998, Pages 245-250
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Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates
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Author keywords
Molecular beam epitaxy; Si1 xGex; Silicon on insulator substrates; Strain relaxation; Thermal stability
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Indexed keywords
ANNEALING;
MOLECULAR BEAM EPITAXY;
RELAXATION PROCESSES;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
SILICON ON INSULATOR TECHNOLOGY;
SUBSTRATES;
SURFACE CLEANING;
THERMAL EFFECTS;
THERMODYNAMIC STABILITY;
ELASTIC STRAIN RELAXATION;
SILICON GERMANIUM;
SEMICONDUCTING FILMS;
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EID: 0032065782
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)00481-7 Document Type: Article |
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Times cited : (32)
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References (16)
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