Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 142-144

  Lueck, M R ^a   Andre, C L ^a   Pitera, A J ^b   Lee, M L ^b   Fitzgerald, E A ^b   Ringel, S A ^a  

^a Ohio State University   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Dislocation; Dual junction; GaAs; GaInp; Heteroepitaxy; InGap; Lattice mismatch; Metamorphic; Photovoltaic; Si; SiGe; Solar cell; Tandem

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

DUAL JUNCTION; HETEROEPITAXY; HIGH OPEN CIRCUIT VOLTAGE; LATTICE-MISMATCH; METAMORPHIC SUBSTRATES;

SOLAR CELLS;

EID: 33644630596     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.870250     Document Type: Article

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