Dislocation energetics in epitaxial strained islands

Applied Physics Letters

Volumn 77, Issue 16, 2000, Pages 2533-2535

  Spencer, B J ^a   Tersoff, J ^b  

^a UNIVERSITY AT BUFFALO   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000500875     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1319186     Document Type: Article

References (9)

1. J. Y. Tsao, Materials Fundamentals of Molecular Beam Epitaxy (Academic, New York, 1993), pp. 151-197.
2. See, e.g., H. Gao, J. Mech. Phys. Solids 42, 741 (1994), and references therein.
3. F. K. LeGoues, M. C. Reuter, J. Tersoff, M. Hammar, and R. M. Tromp, Phys. Rev. Lett. 73, 300 (1994); Appl Phys. Lett. 67, 2317 (1995).
4. F. K. LeGoues, M. C. Reuter, J. Tersoff, M. Hammar, and R. M. Tromp, Phys. Rev. Lett. 73, 300 (1994); Appl Phys. Lett. 67, 2317 (1995).
5. H. T. Johnson and L. B. Freund, J. Appl. Phys. 81, 6081 (1997).
6. B. J. Spencer and J. Tersoff, Phys. Rev. Lett. 79, 4858 (1997).
7. J. P. Hirth and J. Lothe, Theory of Dislocations (Wiley, New York, 1982).
8. See J. E. Ayers and L. J. Schowalter, Phys. Rev. Lett. 72, 4055 (1994); F. K. LeGoues, P. M. Mooney, and J. Tersoff, ibid. 72, 4056 (1994), and references therein.
9. See J. E. Ayers and L. J. Schowalter, Phys. Rev. Lett. 72, 4055 (1994); F. K. LeGoues, P. M. Mooney, and J. Tersoff, ibid. 72, 4056 (1994), and references therein.