Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge/Si virtual substrate

Electronics Letters

Volumn 39, Issue 23, 2003, Pages 1658-1660

  Chriqui, Y ^a   Saint Girons, G ^a   Bouchoule, S ^a   Moison, J M ^a   Isella, G ^b   Von Kaenel, H ^b   Sagnes, I ^a  

^a UNIV PARIS SUD   (France)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

LOW ENERGY PLASMA ENCHANCED CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATION; THRESHOLD CURRENT DENSITY; VIRTUAL SUBSTRATE;

QUANTUM WELL LASERS;

EID: 0344118208     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030926     Document Type: Article

References (6)

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2. 1-x/Si and Ge substrates', J. Appl. Phys., 2000, 87, (5), pp. 2618-2628
3. Li, Y., et al.: 'On the sublattice location of GaAs grown on Ge', J. Appl. Phys., 1994, 76, (10), pp. 5748-5753
4. Groenert, M.E., et al.: 'Monolithic integration of room-temperature CW GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers', J. Appl. Phys., 2003, 93, (1), pp. 362-367
5. Rosenblad, C., et al.: 'Silicon epitaxy by low-enhanced chemical vapor deposition', J. Vac. Sci. Technol. A, 1998, 16, pp. 2785-2790
6. Pitera, A.J., et al.: 'CMOS-compatible platform for Ge and III-V integration with Si'. Conf. Proc. 3rd Int. SiGe Epitaxy and Heterostructures Conf. (ICSI'03), Santa Fe, USA, March 2003, pp. 155-157