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Journal of Crystal Growth

Volumn 191, Issue 3, 1998, Pages 319-331

Growth mechanisms of III-V compounds by atomic hydrogen-assisted epitaxy

(3) LaPierre, R R a Robinson, B J a Thompson, D A a

a MCMASTER UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ENERGY GAP; HALL EFFECT; HYDROGEN; MAGNETIC FIELD MEASUREMENT; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

LATERAL COMPOSITION MODULATION (LCM);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032120099 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00173-0 Document Type: Article

Times cited : (11)

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