Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si 0.7Ge 0.3 layers on Si(001)

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3579-3588

  Spila, T ^a   Desjardins, P ^a   Vailionis, A ^a   Kim, H ^a   Taylor, N ^a   Cahill, D G ^a   Greene, J E ^a   Guillon, S ^b   Masut, R A ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM DIFFUSION; COHERENCE LENGTHS; DRIVING FORCES; GROWTH MOUNDS; MORPHOLOGICAL EVOLUTION; PREFERENTIAL ATTACHMENTS; SI(0 0 1); SOLID SOURCES; STRAINED FILMS; SURFACE-ROUGHENING; THERMAL ACTIVATION;

EPITAXIAL GROWTH; FILM GROWTH; GERMANIUM; HYDROGEN; MOLECULAR BEAM EPITAXY; MONOLAYERS; PROBABILITY; THREE DIMENSIONAL; TWO DIMENSIONAL;

SILICON;

EID: 0037087453     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448680     Document Type: Article

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