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Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 96-99

TEM investigation of the dependence of structural defects on prelayer formation in GaAs-on-Si thin films

(3) Lioutas, Ch B a Delimitisi, A a Georgakilas, A b

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER (Greece)

Author keywords

Molecular beam epitaxy; Optoelectronic devices; Structural properties; Transmission electron microscopy

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); FILM GROWTH; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

THREADING DISLOCATIONS;

SEMICONDUCTING FILMS;

EID: 0032312879 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01217-6 Document Type: Article

Times cited : (7)

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