GaAs MESFETs fabricated on Si substrates using a SrTiO 3 buffer layer

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 300-302

  Eisenbeiser, K ^a,b   Emrick, R ^a,b   Droopad, R ^a,b   Yu, Z ^a,b   Finder, J ^b   Rockwell, S ^a,b   Holmes, J ^a,b   Overgaard, C ^b   Ooms, W ^a,b  

^a IEEE   (United States)

^b MOTOROLA INC   (United States)

Author keywords

GaAs; GaAs on Si; MESFET; Si

Indexed keywords

HETEROEPITAXIAL GROWTH; LATTICE MISMATCH; STRONTIUM TITANATE; WET ETCHING;

CARRIER MOBILITY; CRYSTAL LATTICES; ELECTRIC CURRENTS; ETCHING; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; STRONTIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

MESFET DEVICES;

EID: 0036610543     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004215     Document Type: Letter

References (9)

1. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates
2. Comparison of GaAs grown on standard Si (511) and compliant SOI (511)
3. Enhanced spontaneous emission in hydrogen-plasma-passivated AlGaAs/GaAs vertical-cavity surface-emitting laser structures grown on Si substrate
4. Use of ZnSe as an interlayer for GaAs growth on Si
5. Gallium arsenide and other compound semiconductors on silicon
6. Properties of GaAs on Si grown by molecular beam epitaxy
7. Effects of dislocation and stress on characteristics of GaAs-based laser grown on Si by metalorganic chemical vapor deposition
8. RF devices implemented on GaAs on Si substrates using a SrTiO3 buffer layer
9. Epitaxial oxides on Si: A new compliant substrate for compound semiconductors