A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate

Journal of Electronic Materials

Volumn 34, Issue 1, 2005, Pages 23-26

  Chang, Edwaed Y ^a   Yang, Tsung Hsi ^a   Luo, Guangli ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Dislocation; GaAs on Si; Heterostructure; Metal organic chemical vapor deposition (MOCVD); SiGe; Ultrahigh vacuum chemical vapor deposition (UHV CVD)

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; GERMANIUM COMPOUNDS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; VACUUM APPLICATIONS;

DISLOCATION; GAAS ON SI; SIGE; ULTRAHIGH-VACUUM CHEMICAL VAPOR DEPOSITION (UHV/CVD);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 13244270211     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0175-5     Document Type: Article

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