Growth studies of GaP on Si by gas-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 256-262

  Bi, W G ^a   Mei, X B ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTIMIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACES; TEMPERATURE; THIN FILMS; X RAY DIFFRACTION;

GAS SOURCE MOLECULAR BEAM EPITAXY; GROWTH TEMPERATURE; HIGH RESOLUTION X RAY DIFFRACTION ROCKING CURVE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030190457     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00026-7     Document Type: Article

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