Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1317-1323

  Isella, G ^a   Chrastina, D ^a   Rossner B ^b   Hackbarth, T ^c   Herzog, H J ^c   Konig U ^c   Von Kanel H ^a  

^a INFM   (Italy)

^b ETH ZURICH   (Switzerland)

^c DAIMLER AG   (Germany)

Author keywords

MODFET; Relaxed buffer; Silicon germanium (SiGe); Virtual substrates

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); FIELD EFFECT TRANSISTORS; GROWTH KINETICS; HEATING; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SHUBNIKOV-DE HAAS EFFECT; SOLID STATE DEVICES; STRAIN; SURFACE ROUGHNESS;

MODULATION-DOPED FIELD-EFFECT TRANSISTORS (MODFET); RELAXED BUFFERS; SILICON-GERMANIUM (SIGE); VIRTUAL SUBSTRATES (VS);

HETEROJUNCTIONS;

EID: 2342624657     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.013     Document Type: Article

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