Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1471-1474

  Sieg, R M ^a   Ringel, S A ^a   Ting, S M ^b   Samavedam, S B ^b   Currie, M ^b   Langdo, T ^b   Fitzgerald, E A ^b  

^a Ohio State University   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001616897     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

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