Self-organized growth of quantum-dot structures

Semiconductor Science and Technology

Volumn 11, Issue 10, 1996, Pages 1365-1379

  Nötzel, Richard ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRONIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

LATERAL ORDERING; LATTICE MISMATCHED; SELF ORGANIZING FORMATION; STRANSKI-KRASTANOV GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0030263111     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/10/004     Document Type: Review

References (105)

1. Weisbuch C and Vinter B 1991 Quantum Semiconductor Heterostructures (Boston: Academic)
2. Arakawa Y and Sakaki H 1982 Appl. Phys. Lett. 40 939
3. Sakaki H 1989 Japan. J. Appl. Phys. 28 L314
4. For a review on fabrication methods and optical properties see Kash K 1990 J. Lumin. 46 69
5. Nötzel R and Ploog K 1993 Adv. Mater. 5 22
6. For a recent review see Eberl K, Petroff P M and Demmester P (ed) 1995 Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (NATO Advanced Science Institute Series E, vol 298) (Dordrecht: Kluwer)
7. Stranski I N and Krastanow L 1939 Akad. Wiss. Lit. Mainz Math.-Natur Kl. 11b 146 797
8. Bauer E 1958 Z. Kristallogr. 110 372
9. Carlin J F, Houdre R, Rudra A and Ilegems M 1991 Appl. Phys. Lett. 59 3018
10. Ahopelto J, Yamaguchi A, Nishi K, Usui A and Sakaki H 1993 Japan. J. Appl. Phys. 32 L32
11. Carlsson N, Seifert W, Petersson A, Castrillo P, Pistol M E and Samuelson L 1994 Appl. Phys. Lett. 65 3093
12. DenBaars S P, Reaves C M, Bressler-Hill V, Varma S, Weinberg W H and Petroff P M, 1994 J. Crystal Growth 145 721
13. Ahopelto J, Lipsanen H, Sopanen M and Koljonen T 1994 Appl. Phys. Lett. 65 1662
14. Georgsson K, Carlsson N, Samuelson L, Seifert W and Wallenberg L R 1995 Appl. Phys. Lett. 67 2981
15. Kurtenbach A. Eberl K and Shitara T 1995 Appl. Phys. Lett. 66 361
16. Fafard S, Wasilewski Z, McCaffrey J, Raymond S and Charbonneau S 1996 Appl. Phys. Lett. 68 991
17. Bennett B R, Magno R and Shanabrook BV 1996 Appl. Phys. Lett. 68 505
18. Hatami F et al 1995 Appl. Phys. Lett. 67 656
19. Sun C K, Wang G, Bowers J E, Brar B, Blank H R, Kroemer H and Pilkuhn M H 1996 Appl. Phys. Lett. 68 1543
20. Eaglesham D J and Cerullo M 1990 Phys. Rev. Lett. 64 1943
21. Mo Y W, Savage D E, Swartzentruber B S and Legally M G 1990 Phys. Rev. Lett. 65 1020
22. Kuan T S and Iyer S S 1991 Appl. Phys. Lett. 59 2242
23. Aumann C E, Mo Y W and Lagally M G 1991 Appl. Phys. Lett. 59 1061
24. Jesson D E and Pennycook S J 1993 Phys. Rev. Lett. 71 1744
25. Tersoff J and LeGoues F K 1994 Phys. Rev. Lett. 72 3570
26. LeGoues F K, Tersoff J, Reuter M C, Hammer M and Tromp R 1995 Appl. Phys. Lett. 67 2317
27. Tersoff J, Teichert C and Lagally M G 1996 Phys. Rev. Lett. 76 1675
28. Goldstein L, Glas F, Marzin J Y, Charasse M N and Le Roux G 1985 Appl. Phys. Lett. 47 1099
29. Guha S, Madhukar A and Rajkumar K C 1990 Appl. Phys. Lett. 57 2110
30. Drucker J 1993 Phys. Rev. B 48 18 203
31. Snyder C W, Orr B G, Kessler D and Sander L M 1991 Phys. Rev. Lett. 66 3032
32. Wang S M, Andersson T G and Ekenstedt M J 1992 Appl. Phys. Lett. 61 3139
33. Snyder C W, Mansfield J F and Orr B G 1992 Phys. Rev. B 46 9551
34. Leonard D, Krishnamurthy M, Reaves C M, DenBaars S P and Petroff P M 1993 Appl. Phys. Lett. 63 3203
35. Leonard D, Krishnamurthy M, Fafard S, Merz J L and Petroff P M 1994 J. Vac. Sci. Technol. B 12 1063
36. Moison J M, Houzay F, Barthe F, Leprince L, Andre E and Vatel O 1994 Appl. Phys. Lett. 64 1994
37. Oshinowo J, Nishioka M, Ishida S and Arakawa Y 1994 Appl. Phys. Lett. 65 1421
38. Oshinowo J, Nishioka M, Ishida S and Arakawa Y 1994 Japan. J. Appl. Phys. 33 L1634
39. Nabetani Y, Ishikawa T, Noda S and Sasaki A 1994 J. Appl. Phys. 76 347
40. Grandjean N, Massies J and Raymond F 1994 Japan. J. Appl. Phys. 33 L1427
41. Madhukar A, Xie Q, Chen P and Konkar A 1994 Appl. Phys. Lett. 64 2727
42. Mukai K, Ohtsuka N, Sugawara M and Yamazaki S 1994 Japan. J. Appl. Phys. 33 L1710
43. Solomon G S, Trezza J A and Harris J S Jr 1995 Appl. Phys. Lett. 66 991
44. Solomon G S, Trezza J A and Harris J S Jr 1995 Appl. Phys. Lett. 66 3161
45. Gérard J M, Genin J B, Lefebvre J, Moison J. M, Lebouche N and Barthe F 1995 J. Crystal Growth 150 351
46. Xie Q, Chen P and Madhukar A 1994 Appl. Phys. Lett. 65 2051
47. Xie Q, Chen P, Kalburge A, Ramachandran T R, Nayfonov A, Konkar A and Madhukar A 1995 J. Crystal Growth 150 357
48. Pistol M E, Carlsson N, Petersson C, Seifert W and Samuelson L 1995 Appl. Phys. Lett. 67 1438
49. Lipsanen H, Sopanen M and Ahopelto J 1995 Phys. Rev. B 51 13 868
50. Xie Q, Madhukar A, Chen P and Kobayashi P 1995 Phys. Rev. Lett. 75 2542
51. Solomon G S, Trezza J A, Marshall A F and Harris J S Jr 1996 Phys. Rev. Lett. 76 952
52. Sugiyama Y, Nakata Y, Imamura K, Muto S and Yokoyama N 1996 Japan. J. Appl. Phys. 35 1320
53. Grundmann M et al 1995 Phys. Status Solidi b 188 249
54. Shchukin V A, Ledentsov N, Kop'ev P S and Bimberg D 1995 Phys. Rev. Lett. 75 2968
55. Ruvimov S et al 1995 Phys. Rev. B 51 14766
56. Grundmann M et al 1996 Proc. 8th Int. Conf. on InP and Related Materials (New York: IEEE) p 738
57. Leonard D, Pond K and Petroff P M 1994 Phys. Rev. B 50 11 687
58. Ikoma N and Ohkouchi S 1995 Japan. J. Appl. Phys. 34 L724
59. Kitamura M, Nishioka M, Oshinowo J and Arakawa Y 1995 Appl. Phys. Lett. 66 3663
60. Mui DSL, Leonard D, Coldren L A and Petroff P M 1995 Appl. Phys. Lett. 66 1620
61. Seifert W, Carlsson N, Petersson A, Wernersson L E and Samuelson L 1996 Appl. Phys. Lett. 68 1684
62. Jeppesen S, Miller M S, Hessman D, Kowalski B, Maximov I and Samuelson L 1996 Appl. Phys. Lett. 68 2228
63. Saitoh T, Tanimura A and Yoh K 1996 Japan. J. Appl. Phys. 35 1370
64. Fafard S, Leonard D, Merz J L and Petroff P M 1994 Appl. Phys. Lett. 65 1388
65. Leon R, Fafard S, Leonard D, Merz J L and Petroff P M 1995 Appl. Phys. Lett. 67 521
66. Tackeuchi A, Nakata Y, Muto S, Sugiyama Y, Inata T and Yokoyama N 1995 Japan. J. Appl. Phys. 34 L405
67. Leon R, Petroff P M, Leonard D and Fafard S 1995 Science 267 1966
68. Grundmann M et al 1995 Phys. Rev. Lett. 74 4043
69. Marzin J Y, Gerard J M, Izrael A, Barrier D and Bastard G 1994 Phys. Rev. Lett. 73 716
70. Fafard S, Leon R, Leonard D, Merz J L and Petroff P M 1994 Phys. Rev. B 50 8086
71. Wang G, Fafard S, Leonard D, Bowers J E, Merz J L and Petroff P M 1994 Appl. Phys. Lett. 64 2815
72. Raymond S, Fafard S, Charbonneau S, Leon R, Leonard D, Petroff P M and Merz J L 1995 Phys. Rev. B 52 17 238
73. Fafard S, Leon R, Leonard D, Merz J L and Petroff P M 1995 Phys. Rev. B 52 5752
74. Heitz R et al 1996 Appl. Phys. Lett. 68 361
75. Grundmann M, Ledentsov N, Stier O, Bimberg D, Ustinov V M, Kop'ev P S and Alferov Zh I 1996 Appl. Phys. Lett. 68 979
76. Drexler H, Leonard D, Hansen W, Kotthaus J P and Petroff P M 1994 Phys. Rev. Lett. 73 2252
77. Nötzel R, Temmyo J and Tamamura T 1994 Nature 369 131
78. Nötzel R, Temmyo J and Tamamura T 1994 Japan. J. Appl. Phys. 33 L275
79. Nötzel R, Fukui T, Hasegawa H, Temmyo J and Tamamura T 1994 Appl. Phys. Lett. 65 2854
80. Nötzel R, Fukui T, Hasegawa H, Temmyo J, Kozen A and Tamamura T 1995 Chem. Vap. Deposition 1 81
81. Nötzel R, Temmyo J, Tamamura T, Fukui T and Hasegawa H 1995 Japan. J. Appl. Phys. 34 L872
82. Nötzel R, Temmyo J, Kozen A, Tamamura T, Fukui T and Hasegawa H 1995 Appl. Phys. Lett. 66 2525
83. Nötzel R, Temmyo J, Kamada H, Furuta T and Tamamura T 1994 Appl. Phys. Lett. 65 457
84. Nötzel R, Temmyo J and Tamamura T 1994 Appl. Phys. Lett. 64 3557
85. Koguchi N and Ishige K 1993 Japan. J. Appl. Phys. 32 2052
86. Liliental-Weber Z 1992 Mater. Res. Soc. Symp. Proc. 241 101
87. Melloch M R, Woodall J M, Otsuka N, Mahalingnam K, Chang C L and Nolte D D 1993 Mater. Sci. Eng. B 22 31
88. Kiehl R A, Saito M, Yamaguchi M, Ueda O and Yokoyama N 1995 Appl. Phys. Lett. 66 2194
89. Kiehl R A, Yamaguchi M, Ueda O, Horiguchi N and Yokoyama N 1996 Appl. Phys. Lett. 68 478
90. Gwo S, Miwa S, Ohno H, Fan J F and Tolumoto H 1995 Appl. Phys. Lett. 67 3123
91. Brus L E 1991 Appl. Phys. A 53 465
92. Murray C B, Kagan C R and Bawendi M G 1995 Science 270 1335
93. Ishizaki J, Goto S, Kishida M, Fukui T and Hasegawa H 1994 Japan. J. Appl. Phys. 33 721
94. Hess H F, Betzig E, Harris T D, Pfeiffer L N and West K W 1994 Science 264 1740
95. Brunner K, Abstreiter G, Böhm G, Tränkle G and Weimann G 1994 Appl. Phys. Lett. 64 3320
96. Zrenner A, Butov L V, Hagn M, Abstreiter G, Böhm G and Weimann G 1994 Phys. Rev. Lett. 72 3382
97. Kirstaedter N et al 1994 Electron. Lett. 30 1416
98. Bimberg D et al 1996 Phys. Status Solidi b 194 159
99. Xie Q et al 1996 J. Vac. Sci. Technol. B 14 2203
100. Hasegawa Y, Egawa T, Jimbo T and Umeno M 1996 Appl. Phys. Lett. 68 523
101. Hasegawa Y, Egawa T, Jimbo T and Umeno M 1995 Int. Conf. Solid State Devices and Materials, Osaka, Extended Abstracts p 722
102. Temmyo J, Kuramochi E, Nishiya T, Sugo M, Nötzel R and Tamamura T 1995 Electron. Lett. 31 209
103. Nötzel R, Ledentsov N, Däweritz L, Hohenstein M and Ploog K 1991 Phys. Rev. Lett. 67 3812
104. Nötzel R, Menniger J, Ramsteiner M, Ruiz A, Schönherr H P and Ploog K H 1996 Appl. Phys. Lett. 68 1132
105. Nötzel R, Ramsteiner M, Menniger J, Trampert A, Schönherr H P, Däweritz and Ploog K H 1996 Japan. J. Appl. Phys. 35 L297