Gas-source molecular beam epitaxy of SiGe virtual substrates: I. Growth kinetics and doping

Semiconductor Science and Technology

Volumn 15, Issue 4, 2000, Pages 362-369

  Hartmann, J M ^a,b   Gallas, B ^a   Ferguson, R ^a   Fernandez J ^a   Zhang, J ^a   Harris, J J ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

GAS SOURCE MOLECULAR BEAM EPITAXY (GS-MBE); VIRTUAL SUBSTRATES;

SEMICONDUCTOR GROWTH;

EID: 0033906613     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/4/310     Document Type: Article

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