Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate

Optical Materials

Volumn 27, Issue 5, 2005, Pages 846-850

  Chriqui, Y ^a   Saint Girons, G ^a   Isella, G ^b   Kaenel, H Von ^b   Bouchoule, S ^a   Sagnes, I ^a  

^a UNIV PARIS SUD   (France)

^b L NESS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRACK INITIATION; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EXPANSION;

ANTIPHASE BOUNDARIES (APB); ATOMIC LAYER EPITAXY (ALE); ROOM TEMPERATURE (RT); VIRTUAL SUBSTRATES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 13444282375     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.08.022     Document Type: Conference Paper

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