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Volumn 188, Issue 1-4, 1998, Pages 119-124

Nucleation and growth of Ge on Si(1 1 1) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy

(5) Okada, M a Muto, A a Ikeda, H a Zaima, S a Yasuda, Y a

a NAGOYA UNIVERSITY (Japan)

Author keywords

Additional atomic H irradiation; Ge Si epitaxial growth; MBE; Nucleation; STM; Surface diffusion; Surface structure

Indexed keywords

ACTIVATION ENERGY; COMPOSITION EFFECTS; DESORPTION; GAS ADSORPTION; MOLECULAR BEAM EPITAXY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THERMAL EFFECTS;

ATOMIC HYDROGEN IRRADIATION;

SEMICONDUCTING GERMANIUM;

EID: 0032097736 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00041-4 Document Type: Article

Times cited : (12)

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