High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

Applied Physics Letters

Volumn 73, Issue 21, 1998, Pages 3111-3113

  Sieg, R M ^a   Carlin, J A ^a   Boeckl, J J ^a   Ringel, S A ^a   Currie, M T ^b   Ting, S M ^b   Langdo, T A ^b   Taraschi, G ^b   Fitzgerald, E A ^b   Keyes, B M ^c  

^a Ohio State University   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001392338     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122689     Document Type: Article

References (17)

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