Lattice relaxation of GaAs islands grown on Si(100) substrate

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 701-703

  Asai, Koyu ^a   Kamei, Kazuhito ^a   Katahama, Hisashi ^a  

^a Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACES;

ATOMIC BOND FLEXIBILITY; LATTICE RELAXATION; SUBSTRATE SURFACE;

RELAXATION PROCESSES;

EID: 0031552798     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119834     Document Type: Article

References (19)