Dislocation formation mechanism in strained InxGa1-xAs islands grown on GaAs(001) substrates

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 111-113

  Chen, Y ^a   Lin, X W ^a   Liliental Weber, Z ^a   Washburn, J ^a   Klem, J F ^b   Tsao, J Y ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002425060     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116773     Document Type: Article

References (17)

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