Strain relaxation by alloying effects in ge islands grown on si(001)

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 23, 1999, Pages 15605-15608

  Leon, R ^c   Jiang, Z M ^b   Wang, X ^b  

^a UNIVERSITY OF SYDNEY   (Australia)

^b FUDAN UNIVERSITY   (China)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001179563     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.15605     Document Type: Article

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