Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(1 0 0)

Journal of Crystal Growth

Volumn 207, Issue 1, 1999, Pages 150-153

  Liu, J P ^a   Wang, J Z ^a   Huang, D D ^a   Li, J P ^a   Sun, D Z ^a   Kong, M Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISSOLUTION; LUMINESCENCE OF INORGANIC SOLIDS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH;

LATTICE MISMATCH;

SEMICONDUCTING SILICON;

EID: 0033356460     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00412-1     Document Type: Article

References (17)

1. Leonard D., Krishnamurty M., Reaves C.M., Denbaars S.P., Petroff P. Appl. Phys. Lett. 63:1993;3203.
2. Lin X.W., Washburn J., Lilienthal-Weber Z., Weber E.R., Sasaki A., Wakahara A., Nabetani Y. Appl. Phys. Lett. 65:1994;1677.
3. Mateeva E., Sutter P., Bean J.C., Lagally M.G. Appl. Phys. Lett. 71:1997;3233.
4. Garcia J.M., Medeiros-Ribeiro G., Schmidt K., Ngo T., Feng J.L., Lorke A., Kotthaus J., Petroff P.M. Appl. Phys. Lett. 71:1997;2014.
5. Sutter P., Lagally M.G. Phys. Rev. Lett. 81:1998;3471.
6. Liu J.P., Kong M.Y., Li J.P., Liu X.F., Huang D.D., Sun D.Z. J. Crystal Growth. 193:1998;535.
7. Medeiros-Ribeiro G., Bratkovski A.M., Kamins T.I., Ohlberg D.A.A., Williams R.S. Science. 279:1998;5349.
8. Liu J.P., Gong Q., Huang D.D., Li J.P., Sun D.Z., Kong M.Y. J. Crystal Growth. 200:1999;617.
9. Weber J., Alonso M.I. Phys. Rev. B. 40:1989;5683.
10. Kishimoto Y., Shiraki Y., Fukatsu S. Appl. Phys. Lett. 70:1997;2837.
11. Sunamura H., Usami N., Shiraki Y., Fukatsu S. Appl. Phys. Lett. 66:1995;3024.
12. Fukatsu S., Sunamura H., Shiraki Y., Komiyama S. Appl. Phys. Lett. 71:1997;258.
13. Thewalt M.L.W., Harrison D.A., Reinhart C.F., Wolk J.A., Lafontaine H. Phys. Rev. Lett. 79:1997;269.
14. Cowern N.E.B., Zalm P.C., van der Sluis P., Graveteijn D.J., B de Boer W. Phys. Rev. Lett. 72:1994;2585.
15. Hollander B., Butz R., Mantl S. Phys. Rev. 46:1992;6975.
16. Kim E.S., Usami N., Shiraki Y. Appl. Phys. Lett. 72:1998;1617.
17. Van de Walle C.G., Martin R.M. Phys. Rev. B. 40:1989;5683.