Evolution of Ge islands on Si(001) during annealing

Journal of Applied Physics

Volumn 85, Issue 2, 1999, Pages 1159-1171

  Kamins, T I ^a   Medeiros Ribeiro, G ^a   Ohlberg, D A A ^a   Stanley Williams, R ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000326270     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369255     Document Type: Article

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