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Volumn 80, Issue 7, 2002, Pages 1189-1191

Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; EXTERNAL QUANTUM EFFICIENCY; GE DOTS; GE QUANTUM DOT; INTRINSIC LAYER; NORMAL INCIDENCE; PHOTOLUMINESCENCE MEASUREMENTS; PHOTORESPONSES; PIN PHOTODIODE; QUANTUM-DOT PHOTODETECTORS; SI SUBSTRATES; STRANSKI-KRASTANOV MODE;

EID: 79955986137     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1449525     Document Type: Article
Times cited : (91)

References (18)
  • 6
    • 0032068824 scopus 로고    scopus 로고
    • tsf THSFAP 0040-6090
    • H. Presting, Thin Solid Films 321, 186 (1998). tsf THSFAP 0040-6090
    • (1998) Thin Solid Films , vol.321 , pp. 186
    • Presting, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.