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Volumn 380, Issue 1-2, 2000, Pages 32-35
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Ge growth mode modification on carbon-induced Si(001)-c(4×4) surfaces
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CARBON;
CHEMICAL MODIFICATION;
FILM GROWTH;
MONOLAYERS;
MORPHOLOGY;
NUCLEATION;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SUBSTRATES;
WETTING;
STRANSKI-KRASTANOV MODES;
SEMICONDUCTING FILMS;
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EID: 0034499868
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(00)01465-6 Document Type: Article |
Times cited : (27)
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References (9)
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