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Volumn 380, Issue 1-2, 2000, Pages 32-35

Ge growth mode modification on carbon-induced Si(001)-c(4×4) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; CHEMICAL MODIFICATION; FILM GROWTH; MONOLAYERS; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES; WETTING;

EID: 0034499868     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01465-6     Document Type: Article
Times cited : (27)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.