Photoluminescence of carbon-induced Ge islands in silicon

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 246-248

  Beyer, A ^a   Leifeld, O ^a   Muller E ^a   Stutz, S ^a   Sigg, H ^a   Grutzmacher D ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL TRANSITIONS;

SEMICONDUCTING GERMANIUM;

EID: 0034515896     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01516-9     Document Type: Article

References (3)

1. Schmidt O.G., Lange C., Eberl K., Kienzle O., Ernst F. Appl. Phys. Lett. 71:1997;2340.
2. Leifeld O., Grützmacher D., Müller B., Kern K., Kaxiras E., Kelires P.C. Phys. Rev. Lett. 82:1999;972.
3. Leifeld O., Beyer A., Müller E., Kern K., Grützmacher D. Mat. Sci. Eng. B74:2000;222.