Photoluminescence and Raman scattering in three-dimensional Si/Si 1-xGe x nanostructures

Applied Physics Letters

Volumn 84, Issue 8, 2004, Pages 1293-1295

  Kamenev, B V ^a   Tsybeskov, L ^a   Baribeau, J M ^b   Lockwood, D J ^b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION; PHOTOLUMINESCENCE SPECTRUM;

ACTIVATION ENERGY; BAND STRUCTURE; GAS LASERS; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; MORPHOLOGY; MULTILAYERS; PHONONS; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; QUANTUM EFFICIENCY; QUENCHING; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 1642309091     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650873     Document Type: Article

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