Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si(001)

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5069-5074

  Dentel, D ^a   Bischoff, J L ^a   Kubler, L ^a   Stoffel, M ^b   Castelein, G ^c  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c INSTITUT DE CHIMIE DES SURFACES ET INTERFACES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM DOTS; SILICON; X RAY DIFFRACTION ANALYSIS;

CARBON SUBMONOLAYERS;

GERMANIUM;

EID: 0038242279     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1562747     Document Type: Article

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