Characterization of Si1-xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1675-1681

  Lafontaine, H ^a   Houghton, D C ^a   Elliot, D ^a   Rowell, N L ^a   Baribeau, J M ^a   Laframboise, S ^a   Sproule, G I ^a   Rolfe, S J ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001502529     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589209     Document Type: Article

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