Pyramids and domes in the InAs/GaAs(0 0 1) and Ge/Si(0 0 1) systems

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 38-45

  Costantini, G ^a   Rastelli, A ^a   Manzano, C ^a   Acosta Diaz, P ^a   Katsaros, G ^a   Songmuang, R ^a   Schmidt, O G ^a   Kanel H V ^b   Kern, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

A1. Characterization; A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting germanium; B2. Semiconducting III V materials

Indexed keywords

ARSENIC; CHARACTERIZATION; GALLIUM; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM DOTS; SILICON;

ISLANDS; LOW-DIMENSIONAL STRUCTURES; PYRAMIDS; UNIVERSAL DESCRIPTION;

DOMES;

EID: 18544381581     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.047     Document Type: Conference Paper

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