Growth of undulating Si0.5Ge0.5 layers for photodetectors at λ=1.55 μm

Journal of Applied Physics

Volumn 86, Issue 3, 1999, Pages 1287-1291

  Lafontaine, H ^a   Rowell, N L ^b   Janz, S ^b   Xu, D X ^b  

^a SiGe Microsystems   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY GAP; EPITAXIAL GROWTH; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

MULTIQUANTUM WELL (MQW) STRUCTURES; SILICON-ON-INSULATOR WAFERS; STRANSKI-KRASTANOV GROWTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032621310     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370883     Document Type: Article

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