Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Chinese Physics Letters

Volumn 20, Issue 11, 2003, Pages 2001-2003

  Yang, Zheng ^a   Shi, Yi ^a   Liu, Jian Lin ^b   Yan, Bo ^a   Huang, Zhuang Xiong ^a   Pu, Lin ^a   Zheng, You Dou ^a   Wang, Kang Long ^c  

^a NANJING UNIVERSITY   (China)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; MOLECULAR BEAM EPITAXY; PHONONS; SEMICONDUCTOR QUANTUM DOTS; SI-GE ALLOYS;

FREQUENCY SHIFT; MOLECULAR-BEAM EPITAXY; OPTICAL PHONON FREQUENCIES; PHONON CONFINEMENT; PHONON CONFINEMENT EFFECT; QUANTUM DOT SUPERLATTICES; RAMAN SCATTERING MEASUREMENTS; SELF-ASSEMBLED GE QUANTUM DOTS; SI/GE; STRAIN EFFECT;

NANOCRYSTALS;

EID: 0242408231     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/11/028     Document Type: Article

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