Optimization of Si1-xGex/Si waveguide photodetectors operating at λ = 1.3 μm

Journal of Lightwave Technology

Volumn 14, Issue 5, 1996, Pages 787-797

  Naval, L ^a   Jalali, B ^b   Gomelsky, L ^b   Liu, J M ^{b,c,d,e,f,g,h}  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d HARVARD UNIVERSITY   (United States)

^e UNIVERSITY AT BUFFALO   (United States)

^f VERIZON   (United States)

^g Engineering IV   (United States)

^h IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; LIGHT ABSORPTION; MATHEMATICAL MODELS; OPTICAL WAVEGUIDES; OPTIMIZATION; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

BEAM PROPAGATION METHOD; OPTICAL DATA LINKS; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; STRAINED LAYER SUPERLATTICE STRUCTURE; WAVEGUIDE PHOTODETECTORS;

PHOTODETECTORS;

EID: 0030144736     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.495159     Document Type: Article

References (26)

1. S. Luryi, T. P. Pearsall, H. Temkin, and J. C. Bean, "Waveguide infraeel photodetectiors on a silicon chip," IEEE Electron Device Lett., vol. 7, pp. 104-107, 1986.
2. 1-x strained-layer superlattices waveguide photodetectors operating near 1.3 μm," Appl. Phys. Lett., vol. 48, no. 15, pp. 963-965. 1986.
3. B. Jalali, A. F. J. Levi, F. Ross, and E. A. Fitzgerald, "SiGe waveguide photodetetectors grown by rapid thermal chemical vapor deposition," Electron. Lett., vol. 28, no. 3, pp. 269-271, 1992.
4. B. Jalali, L., Naval, and A. F. J. Levi, "Silicon-based receivers for optical data links," J. Lighrwave Technol., vol. 12, pp. 930-935, June 1994.
5. B. Jalali and A. F. J. Levi, "SiGe waveguide infrared p-i-n detector arrays for one-dimensional optical data link applications," in 1992 CLEO, Anaheim, CA, pp. 170-173, May 10-15, 1992.
6. A. V. P. Kesan, P. G. May, E. Bassons, and s. S. lyer, "Integrated waveguide-photodetector using Si/SiGe multiple quantum wells for Icng wavelength applications," in Proc. IEDM, San Francisco, CA, 1990, pp. 26.7.1-4.
7. A. Splett et al., "Integration of waveguides and photodetectors in SiGe for 1.3 μm operation," IEEE Photon, Technol. Lett., vol. 6, pp. 59-61, Jan. 1994.
8. A. Splett and K. Petermann, "Ultimate performance of SiGe/Si multiquantum-well waveguide-photodetector combinations," in ECOC'94. 20th European Conf. Optic. Commun., Firenze, Italy, Sept. 25-29, 1994, vol. 2, pp. 861-4.
9. R. Braunstein, A. R. Moore, and F. Herman, "Intrinsic optical absorpton in germanium-silicaon alloys," Phys. Rev., vol. 109, no. 3, pp. 695-710, 1958.
10. R. A. Slmith, Semiconductors. Cambridge, England: Cambridge University Press, 1959, pp. 201-210.
11. J. I. Pankove, Optical Processes in Semiconductors. New York: Dover, pp. 37-42, 1975.
12. 1-x strained layers and superlattices," Semicond. Sci. Technol., vol. 6, pp. 547-576, 1991.
13. R. People and S. A. Jackson, "Structurally induced staes from strain and confinement," in Semiconductors and Semimetals, T. P. Pearsall, Ed. New York: Academic, vol. 32, pp. 119-174, 1990.
14. x (001) superlattices," Phys. Stat. Sol., (b) 153, pp. 595-609, 1989.
15. C. Y. Chao and S. L. Chuang. "Spin-orbit-coupling effects on the valence band structure of strained semiconductor quantum wells," Phys. Rev. B, vol. 46, no. 7, pp. 4110-4122, 1992.
16. R. People, private communication.
17. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers," J. Cryst. Growth, vol. 27, pp. 118-125, 1974.
18. B. W. Dodson and J. Y. Tsao, "Structural relaxation in strainedlayer heterostructures" in Proc. Second Int. Symp. Silicon Molecular Beam Epitaaxy, J. C. Bean and L. J. Schowalter, Eds., Pennington, NJ: Electrochemical Soc., 1988, pp. 105-113.
19. 1-x/Si strained-layer heterostructures," Appl. Phys. Lett., vol. 47, no. 3, pp. 322-324, 1985.
20. 1-x/Si strained layer heterostructures," Appl. Phys. Lett., vol. 45, no. 11, pp. 1231-1233, 1984.
21. J. C. Bean, "Silicon-based semiconductor heterostructures: Column IV bandgap engineerigng," Proc. IEEE, 1992, vol. 80, no. 4, pp. 571-587.
22. Numerical Data and Funcational Relationships in Science and Technology, Landolt-Börnstein, Group III, vol. 17a: Group III, vol. 22a.
23. H. H. Li, "Refractive index of silicon and germanium and its wavelength and temperature derivatives," J. Phys. Chem. Ref. Data, vol. 9, no. 3. 1980.
24. R. F. Potter, "Germanium (Ge)," in Handbook of Optical Constants of Solids, E. D. Palik, Ed. New York: Academic, 1985, pp. 465-478.
25. M. J. Robertson, S. Ritchie, and P. Dayan, "Semiconductor waveguides; Analysis of coupling between rib waveguides and optical fibers," in SPIE Integr. Optic. Circuit Eng. II, vol. 578, 1985, pp. 184-191.
26. R. Hull, J. C. Bean, F. Cerdeira, A. T. Fiory, and J. M. Gibson, "Stability of semiconductor strained-layer superlattices," Appl. Phys. Lett., vol. 48, no. 1, pp. 56-58, 1986.