A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots

Applied Physics Letters

Volumn 81, Issue 20, 2002, Pages 3855-3857

  Kolobov, A V ^a,b   Morita, K ^c   Itoh, K M ^c,d   Haller, E E ^e  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b IOFFE INSTITUTE   (Russian Federation)

^c KEIO UNIVERSITY   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENCAPSULATION; ISOTOPES; PHONONS; RAMAN SCATTERING; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

OPTICAL TRANSITIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037065098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1521261     Document Type: Article

References (16)

1. T. Takagahara and K. Takeda, Phys. Rev. B 46, 15578 (1992).
2. A.V. Kolobov, J. Appl. Phys. 87, 2926 (2000).
3. J.M. Zhang, M. Gieler, A. Goebel, M. Cardona, E.E. Haller, and K. Itoh, Phys. Rev. B 57, 1348 (1998).
4. M. Nakajima, H. Harima, K. Morita, K. Itoh, K. Mizoguchi, and E.E. Haller, Phys. Rev. B 63, 161304(R) (2000).
5. A.V. Kolobov, J. Vac. Sci. Technol. A 20, 1116 (2002).
6. K. Uchinokura, T. Sekine, and E. Matsuura, J. Phys. Chem. Solids 35, 171 (1974).
7. X.L. Wu, T. Gao, X.M. Bao, F. Yan, S.S. Jiang, and D. Feng, J. Appl. Phys. 82, 2704 (1997).
8. A.K. Das, S.K. Ghose, B.N. Dev, G. Kuri, and T.R. Yang, Appl. Surf. Sci. 165, 260 (2000).
9. W.J. Brya, Solid State Commun. 12, 253 (1973).
10. R. Carius, J. Folsch, D. Lundszien, L. Houben, and F. Finger, Mater. Res. Soc. Symp. Proc. 507, 813 (1998).
11. J.C. Tsang, P.M. Mooney, F. Dacol, and J.O. Chu, J. Appl. Phys. 75, 8098 (1994).
12. A.V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, and K. Tanaka, Appl. Phys. Lett. 86, 451 (2001).
13. F. Boscherini, G. Capellini, L. Di Gaspare, F. Rosei, N. Motta, and S. Mobilio, Appl. Phys. Lett. 76, 682 (2000).
14. V. Madigson, D.V. Regelman, R. Beserman, and K. Dettmer, Appl. Phys. Lett. 73, 1044 (1998).
15. D.V. Murphy and S.R.J. Brueck, Opt. Lett. 8, 494 (1983).
16. K.L. Teo, S.H. Kwok, P.Y. Yu, and S. Guha, Phys. Rev. B 62, 1584 (2000).