Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures

Solid-State Electronics

Volumn 45, Issue 11, 2001, Pages 1921-1925

  Konle, J ^a   Presting, H ^b   Kibbel, H ^b   Thonke, K ^a   Sauer, R ^a  

^a UNIVERSITY OF ULM   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

IR detectors; Quantum dots; SiGe; Solar cells; Stranski Krastanow growth

Indexed keywords

ABSORPTION; ATOMIC FORCE MICROSCOPY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

WAVELENGTH;

PHOTODETECTORS;

EID: 0035501294     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00234-9     Document Type: Article

References (7)

1. x/Si heterojunction infrared detectors and focal plane arrays
2. 22.7% efficient PERL silicon solar cell module with textured front surface
3. Design, fabrication and analysis of crystalline Si-SiGe heterostructure thin-film solar cells
4. Vertically self-organized Ge/Si quantum dots in multilayer structures
5. Nonradiative defects in Si and SiGe/Si heterostrucures grown by molecular beam epitaxy