Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures

Applied Physics Letters

Volumn 83, Issue 24, 2003, Pages 5035-5037

  Kamenev, B V ^a   Grebel, H ^a   Tsybeskov, L ^a   Kamins, T I ^b   Williams, R Stanley ^b   Baribeau, J M ^c   Lockwood, D J ^c  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; GRAIN SIZE AND SHAPE; MOLECULAR VIBRATIONS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SINGLE CRYSTALS; STRAIN; SUBSTRATES; SURFACE ROUGHNESS;

LOCALIZED EMBEDDED STRAIN; POLARIZED RAMAN SCATTERING; SELF-ORGANIZED NANOSTRUCTURE;

NANOSTRUCTURED MATERIALS;

EID: 0347763789     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1628403     Document Type: Article

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